SiC MOSFETs – Mouser Indonesia

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3rd Generation Silicon Carbide MOSFETs

Toshiba 3rd Generation Silicon Carbide MOSFETs are designed for high-power industrial applications like 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs contribute to reducing power consumption and improving power density. This is due to SiC technology which allows devices to deliver higher voltages, faster switching, and lower On-resistance. Toshiba’s third generation chip design offers enhanced reliability in addition to input capacitance (C_ISS) of 4850pF (typical), a low gate-input charge (Q_g) of 128nC (typical), and a drain-to-source On-resistance (R_DS(ON)) of just 15mΩ or 30mΩ (typical).

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Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (IDR) Filter the results in the table by unit price based on your quantity.	Qty.	Mounting Style	Package/Case	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm TW015Z65C,S1F Toshiba 1: Rp315.918,12 132In Stock	Mfr. Part No. TW015Z65C,S1F Mouser Part No 757-TW015Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	132In Stock	Rp315.918,12 Rp263.632,02 Rp181.808,86	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	100 A	15 mOhms	- 10 V, + 25 V	5 V	128 nC		+ 175 C	342 W	Enhancement
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. TW031V65C,LQ Toshiba 1: Rp213.363,98 2.500In Stock New Product	Mfr. Part No. TW031V65C,LQ Mouser Part No 757-TW031V65CLQ New Product	Toshiba	SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. Learn More about Toshiba 3 gen sic mosfets	Datasheet	2.500In Stock	Cut Tape Rp213.363,98 Rp158.142,52 Reel Rp158.142,52	Min.: 1 Mult.: 1 : 2.500	SMD/SMT	DFN-5	1 Channel	650 V	53 A	45 mOhms	- 10 V, 25 V	5 V	65 nC		+ 175 C	156 W	Enhancement
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. TW054V65C,LQ Toshiba 1: Rp166.765,14 2.480In Stock New Product	Mfr. Part No. TW054V65C,LQ Mouser Part No 757-TW054V65CLQ New Product	Toshiba	SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. Learn More about Toshiba 3 gen sic mosfets	Datasheet	2.480In Stock	Cut Tape Rp166.765,14 Rp114.479,04 Reel Rp114.479,04	Min.: 1 Mult.: 1 : 2.500	SMD/SMT	DFN-5	1 Channel	650 V	36 A	81 mOhms	- 10 V, 25 V	5 V	41 nC		+ 175 C	132 W	Enhancement
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. TW092V65C,LQ Toshiba 1: Rp138.512,30 2.493In Stock New Product	Mfr. Part No. TW092V65C,LQ Mouser Part No 757-TW092V65CLQ New Product	Toshiba	SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. Learn More about Toshiba 3 gen sic mosfets	Datasheet	2.493In Stock	Cut Tape Rp138.512,30 Rp93.564,60 Rp89.345,02 Reel Rp89.345,02	Min.: 1 Mult.: 1 : 2.500	SMD/SMT	DFN-5	1 Channel	650 V	27 A	136 mOhms	- 10 V, 25 V	5 V	28 nC		+ 175 C	111 W	Enhancement
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen. TW123V65C,LQ Toshiba 1: Rp109.892,54 2.500In Stock New Product	Mfr. Part No. TW123V65C,LQ Mouser Part No 757-TW123V65CLQ New Product	Toshiba	SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen. Learn More about Toshiba 3 gen sic mosfets	Datasheet	2.500In Stock	Cut Tape Rp109.892,54 Rp65.678,68 Reel Rp65.678,68	Min.: 1 Mult.: 1 : 2.500	SMD/SMT	DFN-5	1 Channel	650 V	18 A	183 mOhms	- 10 V, 25 V	5 V	21 nC		+ 175 C	76 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm TW140Z120C,S1F Toshiba 1: Rp168.966,66 61In Stock	Mfr. Part No. TW140Z120C,S1F Mouser Part No 757-TW140Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	61In Stock	Rp168.966,66 Rp115.579,80	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	20 A	140 mOhms	- 10 V, + 25 V	5 V	24 nC		+ 175 C	107 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm TW045Z120C,S1F Toshiba 1: Rp207.493,26 6In Stock 30Expected 04/12/2026	Mfr. Part No. TW045Z120C,S1F Mouser Part No 757-TW045Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	6In Stock 30Expected 04/12/2026	Rp207.493,26 Rp152.638,72	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	40 A	45 mOhms	- 10 V, + 25 V	5 V	57 nC		+ 175 C	182 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm TW015N120C,S1F Toshiba 1: Rp593.860,02 28In Stock	Mfr. Part No. TW015N120C,S1F Mouser Part No 757-TW015N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	28In Stock	Rp593.860,02 Rp430.764,08 Rp333.530,28 Rp327.476,10 Quote Quote	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV	100 A	182 mOhms	- 10 V, + 25 V	5 V	158 nC	- 55 C	+ 175 C	431 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm TW030N120C,S1F Toshiba 1: Rp231.893,44 67In Stock	Mfr. Part No. TW030N120C,S1F Mouser Part No 757-TW030N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	67In Stock	Rp231.893,44 Rp132.641,58 Rp122.918,20 Rp114.845,96	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV		40 mOhms	- 10 V, + 25 V	5 V	82 nC	- 55 C	+ 175 C	249 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm TW030Z120C,S1F Toshiba 1: Rp221.803,14 17In Stock 30Expected 22/04/2027	Mfr. Part No. TW030Z120C,S1F Mouser Part No 757-TW030Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	17In Stock 30Expected 22/04/2027	Rp221.803,14 Rp166.398,22	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	60 A	30 mOhms	- 10 V, + 25 V	5 V	82 nC		+ 175 C	249 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm TW045N120C,S1F Toshiba 1: Rp249.138,68 92In Stock	Mfr. Part No. TW045N120C,S1F Mouser Part No 757-TW045N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	92In Stock	Rp249.138,68 Rp152.638,72	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV	40 A	182 mOhms	- 10 V, + 25 V	5 V	57 nC	- 55 C	+ 175 C	182 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm TW048Z65C,S1F Toshiba 1: Rp147.318,38 32In Stock 60Expected 21/04/2027	Mfr. Part No. TW048Z65C,S1F Mouser Part No 757-TW048Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	32In Stock 60Expected 21/04/2027	Rp147.318,38 Rp97.050,34	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	40 A	48 mOhms	- 10 V, + 25 V	5 V	41 nC		+ 175 C	132 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm TW060N120C,S1F Toshiba 1: Rp192.999,92 189In Stock	Mfr. Part No. TW060N120C,S1F Mouser Part No 757-TW060N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	189In Stock	Rp192.999,92 Rp151.537,96 Rp138.695,76	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV	36 A	182 mOhms	- 10 V, + 25 V	5 V	46 nC	- 55 C	+ 175 C	170 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm TW060Z120C,S1F Toshiba 1: Rp192.999,92 23In Stock	Mfr. Part No. TW060Z120C,S1F Mouser Part No 757-TW060Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	23In Stock	Rp192.999,92 Rp145.850,70 Rp138.695,76	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	36 A	60 mOhms	- 10 V, + 25 V	5 V	46 nC		+ 175 C	170 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm TW083N65C,S1F Toshiba 1: Rp141.631,12 15In Stock	Mfr. Part No. TW083N65C,S1F Mouser Part No 757-TW083N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	15In Stock	Rp141.631,12 Rp82.923,92 Rp66.962,90 Rp61.459,10 Rp58.340,28	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	20 A	145 mOhms	- 10 V, + 25 V	5 V	21 nC	- 55 C	+ 175 C	76 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm TW083Z65C,S1F Toshiba 1: Rp133.925,80 25In Stock	Mfr. Part No. TW083Z65C,S1F Mouser Part No 757-TW083Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	25In Stock	Rp133.925,80 Rp85.492,36	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	30 A	83 mOhms	- 10 V, + 25 V	5 V	28 nC		+ 175 C	111 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm TW107N65C,S1F Toshiba 1: Rp137.595,00 19In Stock	Mfr. Part No. TW107N65C,S1F Mouser Part No 757-TW107N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	19In Stock	Rp137.595,00 Rp71.732,86 Rp68.430,58	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	20 A	113 mOhms	- 10 V, + 25 V	5 V	28 nC	- 55 C	+ 175 C	111 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm TW107Z65C,S1F Toshiba 1: Rp113.378,28 40In Stock	Mfr. Part No. TW107Z65C,S1F Mouser Part No 757-TW107Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	40In Stock	Rp113.378,28 Rp77.053,20 Rp68.430,58	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	20 A	107 mOhms	- 10 V, + 25 V	5 V	21 nC		+ 175 C	76 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm TW015N65C,S1F Toshiba 1: Rp315.918,12 57Expected 22/04/2027	Mfr. Part No. TW015N65C,S1F Mouser Part No 757-TW015N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	57Expected 22/04/2027	Rp315.918,12 Rp263.632,02 Rp181.808,86	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	100 A	21 mOhms	- 10 V, + 25 V	5 V	128 nC	- 55 C	+ 175 C	342 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm TW015Z120C,S1F Toshiba 1: Rp364.535,02 51Expected 02/11/2026	Mfr. Part No. TW015Z120C,S1F Mouser Part No 757-TW015Z120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	51Expected 02/11/2026	Rp364.535,02 Rp312.432,38	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	100 A	15 mOhms	- 10 V, + 25 V	5 V	158 nC		+ 175 C	431 W	Enhancement
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm TW140N120C,S1F Toshiba 1: Rp167.865,90 210Expected 25/12/2026	Mfr. Part No. TW140N120C,S1F Mouser Part No 757-TW140N120CS1F	Toshiba	SiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	210Expected 25/12/2026	Rp167.865,90 Rp89.895,40 Rp82.740,46	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV	20 A	182 mOhms	- 10 V, + 25 V	5 V	24 nC	- 55 C	+ 175 C	107 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 27mohm TW027N65C,S1F Toshiba 1: Rp189.514,18 Non-Stocked Lead-Time 24 Weeks	Mfr. Part No. TW027N65C,S1F Mouser Part No 757-TW027N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 27mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	Non-Stocked Lead-Time 24 Weeks	Rp189.514,18 Rp148.419,14 Rp129.889,68	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	58 A	37 mOhms	- 10 V, + 25 V	5 V	65 nC	- 55 C	+ 175 C	156 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm TW027Z65C,S1F Toshiba 1: Rp189.147,26 Non-Stocked Lead-Time 24 Weeks	Mfr. Part No. TW027Z65C,S1F Mouser Part No 757-TW027Z65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	Non-Stocked Lead-Time 24 Weeks	Rp189.147,26 Rp133.742,34 Rp111.360,22 Rp99.251,86 Rp92.830,76	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	58 A	27 mOhms	- 10 V, + 25 V	5 V	65 nC		+ 175 C	156 W	Enhancement
SiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm TW048N65C,S1F Toshiba 1: Rp147.501,84 Non-Stocked Lead-Time 24 Weeks	Mfr. Part No. TW048N65C,S1F Mouser Part No 757-TW048N65CS1F	Toshiba	SiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm Learn More about Toshiba 3 gen sic mosfets	Datasheet	Non-Stocked Lead-Time 24 Weeks	Rp147.501,84 Rp103.838,36 Rp84.024,68 Rp74.668,22 Rp66.045,60	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	650 V	40 A	65 mOhms	- 10 V, + 25 V	5 V	41 nC	- 55 C	+ 175 C	132 W	Enhancement

3rd Generation Silicon Carbide MOSFETs

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