Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

Results: 104
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 Mfr.
Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs 700V/8A Ultra Junct X2-Class MOSFET
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8 A 500 mOhms 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 700V/4A Ultra Junct X2-Class MOSFET
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8 A 500 mOhms 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 700V/8A Ultra Junct X2-Class MOSFET
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 350
Mult.: 70

Si Through Hole TO-251-3 N-Channel 1 Channel 700 V 8 A 500 mOhms 30 V 2.5 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube

IXYS MOSFETs PLUS247 650V 102A N-CH X2CLASS
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 102 A 30 mOhms 30 V 3 V 152 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube