700V CoolGaN™ G4 Power Transistors

Infineon Technologies 700V CoolGaN™ G4 Power Transistors are enhancement-mode GaN-on-Si power transistors with properties that allow for high-current, high-voltage breakdown, and high-switching frequency. The GaN systems innovate with industry-leading advancements like patented Island Technology® cell layout which realizes high-current die and high yield. These 700V CoolGaN power transistors enable ultra-power density designs and high system efficiency in power switching. The GS-065 power transistors are housed in the bottom-side cooled PDFN package. These power transistors offer very low junction-to-case thermal resistance, making them ideal for demanding high-power applications. Some of the applications include data center and computing solutions, power adapters, LED lighting drivers, Switched Mode Power Supplies (SMPS), wireless power transfer, and motor drives.

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Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Channel Mode
Maximum Operating Frequency
Minimum Operating Frequency
Technology
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
214In Stock
Cut Tape
Rp188.046,50
Rp104.572,20
Rp87.693,88
Reel
Rp87.693,88
Rp80.172,02
Min.: 1
Mult.: 1
: 250
SMD/SMT TOLL-11 N-Channel 1 Channel 700 V 40 A 58 mOhms - 10 V, + 7 V 2.6 V 6.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
155In Stock
Cut Tape
Rp106.406,80
Rp88.060,80
Rp47.149,22
Reel
Rp47.149,22
Rp40.544,66
Rp39.260,44
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
88In Stock
Cut Tape
Rp114.295,58
Rp60.358,34
Rp50.818,42
Reel
Rp50.818,42
Rp49.717,66
View
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
Lead-Time 18 Weeks
Cut Tape
Rp66.779,44
Rp33.756,64
Rp26.968,62
Reel
Rp26.968,62
Rp23.482,88
Rp23.115,96
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 4.6 A 455 mOhms - 10 V, + 7 V 2.6 V 800 pC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
Non-Stocked Lead-Time 18 Weeks
Cut Tape
Rp92.463,84
Rp82.557,00
Rp41.828,88
Reel
Rp41.828,88
Rp41.645,42
Rp40.544,66
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
Lead-Time 18 Weeks
Cut Tape
Rp111.910,60
Rp61.275,64
Rp51.919,18
Reel
Rp51.919,18
Rp50.818,42
View
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS
Datasheet
Lead-Time 18 Weeks
Cut Tape
Rp139.062,68
Rp74.668,22
Rp61.826,02
Reel
Rp61.826,02
Rp55.404,92
Min.: 1
Mult.: 1
: 250
SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 23 A 90 mOhms - 10 V, + 7 V 4.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si