It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

QPD0005TR13

Name: Qorvo QPD0005TR13
Brand: Qorvo
SKU: 772-QPD0005TR13
Price: 88795 IDR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

772-QPD0005TR13

Mfr. No:

QPD0005TR13

Mfr.:

Qorvo

Description:

GaN FETs 3.3-3.8GHz 5W 50V GaN Transistor

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Qorvo QPD0005TR13

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Vds - Drain-Source Breakdown Voltage:	48 V
Brand:	Qorvo
Gain:	18.8 dB
Maximum Drain Gate Voltage:	48 V
Maximum Operating Frequency:	5 GHz
Minimum Operating Frequency:	2.5 GHz
Moisture Sensitive:	Yes
Output Power:	5 W
Packaging:	Reel
Product Type:	GaN FETs
Series:	QPD0005
Factory Pack Quantity:	2500
Subcategory:	Transistors
Technology:	GaN
Part # Aliases:	QPD0005 QPD0005SR

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

PCN

Product Change Notification (PDF)

Product Catalogs

Description, Features, and Specification Overview (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

USHTS:: 8541497080
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD0005 GaN RF Transistors

Qorvo QPD0005 GaN RF Transistors are single-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) in a plastic overmold DFN package. These RF transistors operate over a 2.5GHz to 5GHz frequency range. Qorvo QPD0005 GaN RF Transistors are single-stage, unmatched transistors capable of delivering P_SAT of 8.7W at 48V operation. These transistors come in a 4.5mm x 4.0mm package and are RoHS compliant. Applications include WCDMA / LTE, macrocell base station, microcell base station, small cell, active antenna, 5G massive MIMO, and general-purpose applications.