Name: Qorvo QPD1016L
Brand: Qorvo
SKU: 772-QPD1016L
Price: 18873998 IDR
Availability: OutOfStock

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package/Case:	NI-780
Transistor Polarity:	P-Channel
Id - Continuous Drain Current:	1 A
Pd - Power Dissipation:	714 W
Maximum Operating Frequency:	1.7 GHz
Minimum Operating Frequency:	0 Hz
Technology:	GaN
Brand:	Qorvo
Gain:	18 dB
Maximum Drain Gate Voltage:	50 V
Moisture Sensitive:	Yes
Output Power:	537 W
Packaging:	Waffle
Product Type:	GaN FETs
Series:	QPD1016L
Factory Pack Quantity:	25
Subcategory:	Transistors

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Datasheet

QPD1016L Datasheet (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD1016L GaN RF Transistor

Qorvo QPD1016L GaN RF Transistor is a 500W (P3dB) pre-matched discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from DC to 1.7GHz. The QPD1016L provides a linear gain of 18dB at 1.3GHz and features a drain efficiency of 67% at 3dB compression. The device can support pulsed and linear operations.