650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency. 

Results: 25
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1.000In Stock
Cut Tape
Rp114.295,58
Rp60.358,34
Rp44.580,78
Rp44.397,32
Reel
Rp44.397,32
Min.: 1
Mult.: 1
: 1.000
SMD/SMT 1 Channel 650 V 17 A 217 mOhms - 5 V, + 23 V 5.7 V 27 nC - 55 C + 175 C 85 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 643In Stock
Cut Tape
Rp334.264,12
Rp206.392,50
Rp200.705,24
Reel
Rp195.384,90
Min.: 1
Mult.: 1
: 1.000
SMD/SMT 1 Channel 650 V 64 A 30 mOhms - 5 V, + 23 V 5.7 V 67 nC - 55 C + 175 C 300 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1.995In Stock
Cut Tape
Rp172.452,40
Rp100.352,62
Rp92.647,30
Rp86.776,58
Reel
Rp82.557,00
Min.: 1
Mult.: 1
: 1.000
SMD/SMT 1 Channel 650 V 39 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 161 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 335In Stock
Rp170.617,80
Rp119.615,92
Rp112.094,06
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 50 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1.019In Stock
Cut Tape
Rp186.028,44
Rp102.921,06
Rp96.499,96
Rp95.032,28
Reel
Rp91.363,08
Min.: 1
Mult.: 1
: 1.000
SMD/SMT 1 Channel 650 V 45 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 175 C 183 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 861In Stock
Cut Tape
Rp136.310,78
Rp85.675,82
Rp78.520,88
Rp73.934,38
Reel
Rp73.200,54
Min.: 1
Mult.: 1
: 1.000
SMD/SMT 1 Channel 650 V 33 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 140 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 753In Stock
Cut Tape
Rp123.652,04
Rp72.466,70
Rp66.045,60
Rp62.192,94
Reel
Rp59.624,50
Min.: 1
Mult.: 1
: 1.000
SMD/SMT 1 Channel 650 V 24 A 141 mOhms - 5 V, + 23 V 5.7 V 35 nC - 55 C + 175 C 110 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1.701In Stock
Rp268.218,52
Rp161.261,34
Rp159.243,28
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 341In Stock
Rp197.402,96
Rp107.324,10
Rp99.251,86
Rp98.518,02
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 298In Stock
Rp190.981,86
Rp109.892,54
Rp101.820,30
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 657In Stock
Cut Tape
Rp93.748,06
Rp48.616,90
Rp44.213,86
Rp38.710,06
Reel
Rp36.508,54
Min.: 1
Mult.: 1
: 1.000
SMD/SMT 1 Channel 650 V 6 A 346 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 465In Stock
Rp265.833,54
Rp149.152,98
Rp145.300,32
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 58 A 42 mOhms - 5 V, + 23 V 5.7 V 48 nC - 55 C + 175 C 197 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 314In Stock
Rp146.034,16
Rp83.841,22
Rp77.970,50
Rp75.035,14
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 463In Stock
Rp138.879,22
Rp72.833,62
Rp66.962,90
Rp61.826,02
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 235In Stock
Rp270.053,12
Rp151.721,42
Rp148.235,68
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 53 A 42 mOhms - 5 V, + 23 V 5.7 V 48 nC - 55 C + 175 C 197 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 128In Stock
Rp171.535,10
Rp98.518,02
Rp87.877,34
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 35 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 133 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 14In Stock
Rp135.393,48
Rp85.675,82
Rp80.355,48
Rp73.567,46
Rp70.081,72
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 24 A 111 mOhms - 5 V, + 23 V 5.7 V 19 nC - 55 C + 175 C 104 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 17In Stock
3.600On Order
Rp291.884,86
Rp165.297,46
Rp163.829,78
Rp163.646,32
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Reel
Rp134.109,26
Min.: 1.000
Mult.: 1.000
: 1.000
SMD/SMT 1 Channel 650 V 63 A 42 mOhms - 5 V, + 23 V 5.7 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Reel
Rp113.011,36
Min.: 1.000
Mult.: 1.000
: 1.000
SMD/SMT 1 Channel 650 V 54 A 51 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 211 W Enhancement CoolSiC


Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Reel
Rp71.182,48
Min.: 1.000
Mult.: 1.000
: 1.000
SMD/SMT 1 Channel 650 V 28 A 111 mOhms - 5 V, + 23 V 5.7 V 44 nC - 55 C + 175 C 126 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Rp214.464,74
Rp117.597,86
Rp108.975,24
Rp108.424,86
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 46 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Rp185.111,14
Rp113.561,74
Rp94.298,44
Rp86.409,66
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 35 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 133 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Rp160.710,96
Rp94.481,90
Rp78.337,42
Rp77.970,50
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 28 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 52 Weeks
Rp83.290,84
Rp72.833,62
Min.: 240
Mult.: 240
Through Hole TO-247-4 1 Channel 650 V 26 A 111 mOhms - 5 V, + 23 V 5.7 V 19 nC - 55 C + 175 C 104 W Enhancement