Results: 35
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging

Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM 5In Stock
1.920On Order
Rp132.825,04
Rp69.347,88
Rp63.477,16
Rp58.340,28
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 53.5 A 63 mOhms 20 V 3.5 V 100 nC - 55 C + 150 C 391 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM 324In Stock
Rp114.112,12
Rp74.851,68
Rp55.221,46
Rp48.800,36
Rp43.480,02
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37.9 A 99 mOhms 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM 85In Stock
240Expected 29/04/2027
Rp102.554,14
Rp52.286,10
Rp47.699,60
Rp40.728,12
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 113 mOhms 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
1.000Expected 15/04/2027
Rp106.223,34
Rp55.588,38
Rp50.818,42
Rp48.066,52
Rp42.746,18
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM
498Expected 22/07/2027
Rp90.812,70
Rp59.624,50
Rp44.397,32
Rp37.058,92
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms 20 V 3.5 V 56 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_LEGACY
500Expected 03/06/2027
Rp71.365,94
Rp46.598,84
Rp33.940,10
Rp28.252,84
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 600V 6.5A TO220FP-3 Non-Stocked Lead-Time 26 Weeks
Rp45.131,16
Rp28.619,76
Rp19.263,30
Rp15.667,48
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10.6 A 342 mOhms 20 V 3.5 V 19 nC - 55 C + 150 C 31 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM Non-Stocked Lead-Time 39 Weeks
Cut Tape
Rp78.704,34
Rp51.552,26
Rp38.343,14
Rp32.105,50
Rp29.903,98
Reel
Rp28.069,38
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT ThinPAK-5 N-Channel 1 Channel 600 V 22.4 A 162 mOhms 20 V 3.5 V 44 nC - 40 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_LEGACY Non-Stocked Lead-Time 19 Weeks
Rp70.632,10
Rp35.774,70
Rp32.288,96
Rp26.234,78
Rp25.867,86
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER PRICE/PERFORM Non-Stocked Lead-Time 39 Weeks
Rp107.324,10
Rp70.265,18
Rp51.735,72
Rp41.461,96
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 113 mOhms 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube