Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging

Infineon Technologies MOSFETs HIGH POWER_NEW 268In Stock
Rp168.416,28
Rp99.251,86
Rp83.657,76
Rp81.089,32
Rp76.319,36
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 290In Stock
Rp183.093,08
Rp125.119,72
Rp103.287,98
Rp92.463,84
Rp86.960,04
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 284In Stock
720On Order
Rp200.521,78
Rp109.158,70
Rp101.086,46
Rp100.536,08
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 41In Stock
500Expected 10/12/2026
Rp148.786,06
Rp80.355,48
Rp73.750,92
Rp67.696,74
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 95In Stock
Rp218.500,86
Rp148.969,52
Rp145.116,86
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 151In Stock
Rp276.290,76
Rp155.574,08
Rp152.822,18
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube