SiC MOSFETs

GeneSiC Semiconductor’s G3R™ Silicon Carbide (SiC) MOSFETs offer RDS(ON) levels from 12mΩ to 1000mΩ and robustness for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver a fast switching frequency, increased power density, reduced ringing (EMI), and a compact size. The G3R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). The modules are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with ultra-low losses. GeneSiC SiC MOSFETs provide faster switching and lower ON resistance than silicon-based products. Additional features include superior electric characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used.

Results: 8
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 Mfr.
Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
GeneSiC Semiconductor SiC MOSFETs 1200V 12mohm TO-247-4 G3R SiC MOSFET
Datasheet
1.614In Stock
Rp1.137.635,46
Rp1.059.114,58
Rp1.029.577,52
Rp1.019.670,68
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 111 A 12 mOhms - 10 V, + 22 V 2.7 V 288 nC - 55 C + 175 C 567 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 450mohm TO-247-3 G3R SiC MOSFET
Datasheet
1.702In Stock
Rp132.274,66
Rp118.882,08
Rp113.928,66
Rp106.773,72
View
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 7 A 450 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 70 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 450mohm TO-263-7 G3R SiC MOSFET
Datasheet
800In Stock
Cut Tape
Rp147.501,84
Rp133.008,50
Rp127.504,70
Rp119.799,38
View
Reel
Rp108.057,94
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.7 kV 8 A 630 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 71 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 20mohm TO-247-4 G3R SiC MOSFET
Datasheet
53In Stock
150Expected 21/04/2027
Rp1.966.691,20
Rp1.824.142,78
Rp1.823.592,40
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 101 A 20 mOhms - 5 V, + 15 V 2.7 V 256 nC - 55 C + 175 C 569 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1200V 30mohm TO-247-4 G3R SiC MOSFET
Datasheet
289In Stock
Rp413.335,38
Rp379.762,20
Rp367.103,46
Rp348.757,46
Rp344.170,96
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 70 A 30 mOhms - 5 V, + 15 V 2.7 V 118 nC - 55 C + 175 C 281 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 45mohm TO-247-4 G3R SiC MOSFET
Datasheet
109In Stock
Rp606.702,22
Rp556.617,64
Rp537.904,72
Rp520.476,02
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 48 A 45 mOhms - 5 V, + 15 V 2.7 V 106 nC - 55 C + 175 C 284 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 160mohm TO-247-3 G3R SiC MOSFET
Datasheet
5In Stock
1.800On Order
Rp224.371,58
Rp202.906,76
Rp195.017,98
Rp183.460,00
Rp177.222,36
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 17 A 160 mOhms - 5 V, + 15 V 2.7 V 29 nC - 55 C + 175 C 138 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1200V 40mohm TO-247-4 G3R SiC MOSFET
Datasheet
Non-Stocked Lead-Time 26 Weeks
Rp324.173,82
Rp296.104,44
Rp285.647,22
Rp270.420,04
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 15 V 2.7 V 88 nC - 55 C + 175 C 228 W Enhancement