|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
Rp131.357
-
515In Stock
|
Mouser Part No
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
515In Stock
|
|
|
Rp131.357
|
|
|
Rp88.611
|
|
|
Rp64.211
|
|
|
Rp63.477
|
|
|
Rp57.606
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STWA65N023M9
- STMicroelectronics
-
1:
Rp287.298
-
248In Stock
|
Mouser Part No
511-STWA65N023M9
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
248In Stock
|
|
|
Rp287.298
|
|
|
Rp162.546
|
|
|
Rp155.758
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs IXYH30N120C4H1
- IXYH30N120C4H1
- IXYS
-
1:
Rp239.599
-
288In Stock
|
Mouser Part No
576-IXYH30N120C4H1
|
IXYS
|
IGBTs IXYH30N120C4H1
|
|
288In Stock
|
|
|
Rp239.599
|
|
|
Rp144.383
|
|
|
Rp126.771
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs IXYH40N120B4H1
- IXYH40N120B4H1
- IXYS
-
1:
Rp275.924
-
321In Stock
|
Mouser Part No
576-IXYH40N120B4H1
|
IXYS
|
IGBTs IXYH40N120B4H1
|
|
321In Stock
|
|
|
Rp275.924
|
|
|
Rp168.416
|
|
|
Rp154.657
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs IXYH40N120C4H1
- IXYH40N120C4H1
- IXYS
-
1:
Rp275.924
-
363In Stock
|
Mouser Part No
576-IXYH40N120C4H1
|
IXYS
|
IGBTs IXYH40N120C4H1
|
|
363In Stock
|
|
|
Rp275.924
|
|
|
Rp168.233
|
|
|
Rp154.473
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs IXYH55N120B4H1
- IXYH55N120B4H1
- IXYS
-
1:
Rp370.956
-
315In Stock
|
Mouser Part No
576-IXYH55N120B4H1
|
IXYS
|
IGBTs IXYH55N120B4H1
|
|
315In Stock
|
|
|
Rp370.956
|
|
|
Rp232.260
|
|
|
Rp226.390
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
- BIDW40N65ES5
- Bourns
-
1:
Rp106.957
-
2.780In Stock
|
Mouser Part No
652-BIDW40N65ES5
|
Bourns
|
IGBTs IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
|
|
2.780In Stock
|
|
|
Rp106.957
|
|
|
Rp60.542
|
|
|
Rp51.002
|
|
|
Rp48.433
|
|
|
Rp47.883
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs IGBT Discrete 650V, 40A, High speed switching in TO-247-3L
- BIDW40N65H5
- Bourns
-
1:
Rp106.223
-
2.967In Stock
|
Mouser Part No
652-BIDW40N65H5
|
Bourns
|
IGBTs IGBT Discrete 650V, 40A, High speed switching in TO-247-3L
|
|
2.967In Stock
|
|
|
Rp106.223
|
|
|
Rp60.542
|
|
|
Rp51.002
|
|
|
Rp47.883
|
|
|
Rp47.516
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
- BIDW75N65ES5
- Bourns
-
1:
Rp138.329
-
2.773In Stock
|
Mouser Part No
652-BIDW75N65ES5
|
Bourns
|
IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
|
|
2.773In Stock
|
|
|
Rp138.329
|
|
|
Rp86.593
|
|
|
Rp72.650
|
|
|
Rp68.247
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
- IKQ120N120CS7XKSA1
- Infineon Technologies
-
1:
Rp221.803
-
531In Stock
|
Mouser Part No
726-IKQ120N120CS7XKS
|
Infineon Technologies
|
IGBTs 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
|
|
531In Stock
|
|
|
Rp221.803
|
|
|
Rp147.869
|
|
|
Rp126.587
|
|
|
Rp126.404
|
|
|
Rp113.929
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs IGBT PRODUCTS
- IKW40N120H3FKSA1
- Infineon Technologies
-
1:
Rp139.246
-
502In Stock
|
Mouser Part No
726-IKW40N120H3FKSA1
|
Infineon Technologies
|
IGBTs IGBT PRODUCTS
|
|
502In Stock
|
|
|
Rp139.246
|
|
|
Rp89.712
|
|
|
Rp75.586
|
|
|
Rp68.247
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMW65R015M2HXKSA1
- Infineon Technologies
-
1:
Rp342.336
-
210In Stock
-
480Expected 25/08/2026
|
Mouser Part No
726-IMW65R015M2HXKSA
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
210In Stock
480Expected 25/08/2026
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMW65R040M2HXKSA1
- Infineon Technologies
-
1:
Rp193.734
-
331In Stock
-
240Expected 10/06/2027
|
Mouser Part No
726-IMW65R040M2HXKSA
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
331In Stock
240Expected 10/06/2027
|
|
|
Rp193.734
|
|
|
Rp114.479
|
|
|
Rp97.234
|
|
|
Rp94.849
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SiC MOSFETs SILICON CARBIDE MOSFET
- IMW65R050M2HXKSA1
- Infineon Technologies
-
1:
Rp166.398
-
874In Stock
|
Mouser Part No
726-IMW65R050M2HXKSA
|
Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
|
874In Stock
|
|
|
Rp166.398
|
|
|
Rp106.223
|
|
|
Rp89.712
|
|
|
Rp86.593
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SiC MOSFETs SIC DISCRETE
- IMWH170R1K0M1XKSA1
- Infineon Technologies
-
1:
Rp122.184
-
367In Stock
|
Mouser Part No
726-IMWH170R1K0M1XKS
|
Infineon Technologies
|
SiC MOSFETs SIC DISCRETE
|
|
367In Stock
|
|
|
Rp122.184
|
|
|
Rp69.531
|
|
|
Rp59.074
|
|
|
Rp52.286
|
|
|
Rp46.966
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW60R016CM8XKSA1
- Infineon Technologies
-
1:
Rp329.861
-
847In Stock
|
Mouser Part No
726-IPW60R016CM8XKSA
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
847In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW60R037CM8XKSA1
- Infineon Technologies
-
1:
Rp168.783
-
990In Stock
|
Mouser Part No
726-IPW60R037CM8XKSA
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
990In Stock
|
|
|
Rp168.783
|
|
|
Rp107.508
|
|
|
Rp90.996
|
|
|
Rp90.813
|
|
|
Rp87.877
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
MOSFETs LOW POWER_NEW
- IPW95R310PFD7XKSA1
- Infineon Technologies
-
1:
Rp76.503
-
3.740In Stock
|
Mouser Part No
726-IPW95R310PFD7XKS
|
Infineon Technologies
|
MOSFETs LOW POWER_NEW
|
|
3.740In Stock
|
|
|
Rp76.503
|
|
|
Rp37.976
|
|
|
Rp34.490
|
|
|
Rp28.620
|
|
|
Rp27.702
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
MOSFETs TO247 600V 24A N-CH MOSFET
- R6024ENZ4C13
- ROHM Semiconductor
-
1:
Rp127.321
-
1.121In Stock
|
Mouser Part No
755-R6024ENZ4C13
|
ROHM Semiconductor
|
MOSFETs TO247 600V 24A N-CH MOSFET
|
|
1.121In Stock
|
|
|
Rp127.321
|
|
|
Rp73.201
|
|
|
Rp64.211
|
|
|
Rp60.175
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
MOSFETs 600V 38A TO-247, High-speed switching Power MOSFET
- R6038YNZ4C13
- ROHM Semiconductor
-
1:
Rp151.721
-
778In Stock
|
Mouser Part No
755-R6038YNZ4C13
|
ROHM Semiconductor
|
MOSFETs 600V 38A TO-247, High-speed switching Power MOSFET
|
|
778In Stock
|
|
|
Rp151.721
|
|
|
Rp103.105
|
|
|
Rp73.934
|
|
|
Rp68.798
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SCRs NEW INPUT THYRISTOR - SUPER-247
- VS-70TPS12-M3
- Vishay Semiconductors
-
1:
Rp284.730
-
460In Stock
|
Mouser Part No
78-VS-70TPS12-M3
|
Vishay Semiconductors
|
SCRs NEW INPUT THYRISTOR - SUPER-247
|
|
460In Stock
|
|
|
Rp284.730
|
|
|
Rp216.850
|
|
|
Rp180.525
|
|
|
Rp160.894
|
|
|
Rp152.455
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs FS7 1200V 25A SCR IGBT STAND-ALONE TO247 3L
- AFGHL25T120RW
- onsemi
-
1:
Rp144.566
-
418In Stock
|
Mouser Part No
863-AFGHL25T120RW
|
onsemi
|
IGBTs FS7 1200V 25A SCR IGBT STAND-ALONE TO247 3L
|
|
418In Stock
|
|
|
Rp144.566
|
|
|
Rp98.335
|
|
|
Rp70.816
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs FS7 1200V 40A SCR IGBT TO247 3L
- AFGHL40T120RWD
- onsemi
-
1:
Rp199.971
-
296In Stock
|
Mouser Part No
863-AFGHL40T120RWD
|
onsemi
|
IGBTs FS7 1200V 40A SCR IGBT TO247 3L
|
|
296In Stock
|
|
|
Rp199.971
|
|
|
Rp138.329
|
|
|
Rp109.526
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SiC Schottky Diodes 650V 40A SIC SBD GEN 1.5
- FFSH4065BDN
- onsemi
-
1:
Rp224.922
-
440In Stock
|
Mouser Part No
863-FFSH4065BDN
|
onsemi
|
SiC Schottky Diodes 650V 40A SIC SBD GEN 1.5
|
|
440In Stock
|
|
|
Rp224.922
|
|
|
Rp155.941
|
|
|
Rp115.580
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
IGBTs 1200V, 100A Trench Field Stop VII (FS7) Discrete IGBT
- FGY100T120RWD
- onsemi
-
1:
Rp255.743
-
544In Stock
|
Mouser Part No
863-FGY100T120RWD
|
onsemi
|
IGBTs 1200V, 100A Trench Field Stop VII (FS7) Discrete IGBT
|
|
544In Stock
|
|
|
Rp255.743
|
|
|
Rp155.758
|
|
|
Rp148.786
|
|
Min.: 1
Mult.: 1
|
|
|
Indonesia
