|
|
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
- EPC2110
- EPC
-
1:
Rp62.743
-
2.500Expected 23/10/2026
-
New At Mouser
|
Mouser Part No
65-EPC2110
New At Mouser
|
EPC
|
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
|
|
2.500Expected 23/10/2026
|
|
|
Rp62.743
|
|
|
Rp40.912
|
|
|
Rp28.436
|
|
|
Rp23.116
|
|
|
Rp19.263
|
|
|
View
|
|
|
Rp22.566
|
|
|
Rp18.346
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
|
|
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
- EPC2203
- EPC
-
1:
Rp28.987
-
23.903On Order
-
New At Mouser
|
Mouser Part No
65-EPC2203
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
|
|
23.903On Order
On Order:
1.403 Expected 31/08/2026
12.500 Expected 18/09/2026
10.000 Expected 20/11/2026
Factory Lead Time:
18 Weeks
|
|
|
Rp28.987
|
|
|
Rp18.254
|
|
|
Rp12.145
|
|
|
Rp9.503
|
|
|
Rp7.742
|
|
|
View
|
|
|
Rp8.659
|
|
|
Rp6.880
|
|
|
Rp6.366
|
|
|
Rp6.293
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
|
|
GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35
- EPC2221
- EPC
-
1:
Rp69.531
-
2.500Expected 20/11/2026
-
New At Mouser
|
Mouser Part No
65-EPC2221
New At Mouser
|
EPC
|
GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35
|
|
2.500Expected 20/11/2026
|
|
|
Rp69.531
|
|
|
Rp45.498
|
|
|
Rp31.739
|
|
|
Rp25.868
|
|
|
Rp21.832
|
|
|
Rp21.098
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
|
|
GaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6
- EPC2234
- EPC
-
1:
Rp251.157
-
457Expected 21/08/2026
-
New At Mouser
|
Mouser Part No
65-EPC2234
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6
|
|
457Expected 21/08/2026
|
|
|
Rp251.157
|
|
|
Rp175.388
|
|
|
Rp142.732
|
|
|
Rp116.497
|
|
Min.: 1
Mult.: 1
:
500
|
|
|
|
|
GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN
- EPC2308
- EPC
-
1:
Rp102.371
-
6.000Expected 11/08/2026
-
New At Mouser
|
Mouser Part No
65-EPC2308
New At Mouser
|
EPC
|
GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN
|
|
6.000Expected 11/08/2026
|
|
|
Rp102.371
|
|
|
Rp68.247
|
|
|
Rp48.800
|
|
|
Rp43.663
|
|
|
Rp42.012
|
|
|
Rp35.408
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
|
|
|
Gate Drivers LOW SIDE DRIVERS
- 1EDN7126UXTSA1
- Infineon Technologies
-
1:
Rp15.411
-
3In Stock
-
4.500Expected 04/05/2027
|
Mouser Part No
726-1EDN7126UXTSA1
|
Infineon Technologies
|
Gate Drivers LOW SIDE DRIVERS
|
|
3In Stock
4.500Expected 04/05/2027
|
|
|
Rp15.411
|
|
|
Rp11.063
|
|
|
Rp9.962
|
|
|
Rp8.751
|
|
|
View
|
|
|
Rp7.063
|
|
|
Rp8.164
|
|
|
Rp7.815
|
|
|
Rp7.540
|
|
|
Rp7.063
|
|
Min.: 1
Mult.: 1
:
4.500
|
|
|
|
|
Gate Drivers LOW SIDE DRIVERS
- 2EDN7524RXTMA1
- Infineon Technologies
-
1:
Rp21.832
-
4.980Expected 24/08/2026
|
Mouser Part No
726-2EDN7524RXTMA1
|
Infineon Technologies
|
Gate Drivers LOW SIDE DRIVERS
|
|
4.980Expected 24/08/2026
|
|
|
Rp21.832
|
|
|
Rp15.741
|
|
|
Rp14.236
|
|
|
Rp12.585
|
|
|
View
|
|
|
Rp10.200
|
|
|
Rp11.796
|
|
|
Rp11.319
|
|
|
Rp11.063
|
|
|
Rp10.586
|
|
|
Rp10.200
|
|
Min.: 1
Mult.: 1
:
5.000
|
|
|
|
|
RF Amplifier 10.7-12.7 GHz 17W PA PHS
- QPA1009
- Qorvo
-
1:
Rp5.613.876
-
20Expected 31/12/2026
|
Mouser Part No
772-QPA1009
|
Qorvo
|
RF Amplifier 10.7-12.7 GHz 17W PA PHS
|
|
20Expected 31/12/2026
|
|
|
Rp5.613.876
|
|
|
Rp5.346.575
|
|
|
Rp5.253.377
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
RF Amplifier 20W, 17.3-21.2 GHz PA
- QPA1725
- Qorvo
-
1:
Rp8.787.551
-
10Expected 10/08/2026
|
Mouser Part No
772-QPA1725
|
Qorvo
|
RF Amplifier 20W, 17.3-21.2 GHz PA
|
|
10Expected 10/08/2026
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
GaN FETs DC-3.6GHz GaN 90W 48V
- QPD0060
- Qorvo
-
1:
Rp2.396.538
-
32Expected 18/08/2026
|
Mouser Part No
772-QPD0060
|
Qorvo
|
GaN FETs DC-3.6GHz GaN 90W 48V
|
|
32Expected 18/08/2026
|
|
|
Rp2.396.538
|
|
|
Rp2.396.171
|
|
|
Rp1.677.558
|
|
|
Rp1.599.588
|
|
|
View
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
:
100
|
|
|
|
|
GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN
- QPD1008
- Qorvo
-
1:
Rp5.908.146
-
19Expected 29/09/2026
|
Mouser Part No
772-QPD1008
|
Qorvo
|
GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN
|
|
19Expected 29/09/2026
|
|
|
Rp5.908.146
|
|
|
Rp5.626.902
|
|
|
Rp4.529.444
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
- QPD1010
- Qorvo
-
1:
Rp1.300.364
-
57On Order
|
Mouser Part No
772-QPD1010
|
Qorvo
|
GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
|
|
57On Order
On Order:
7 Expected 09/09/2026
50 Expected 19/10/2026
Factory Lead Time:
24 Weeks
|
|
|
Rp1.300.364
|
|
|
Rp1.299.998
|
|
|
Rp746.132
|
|
|
Rp736.959
|
|
|
View
|
|
|
Rp732.372
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
RF Amplifier 2-18GHz PAE>20% SSG 22dB GaN
- TGA2214
- Qorvo
-
10:
Rp6.613.733
-
10Expected 14/08/2026
|
Mouser Part No
772-TGA2214
|
Qorvo
|
RF Amplifier 2-18GHz PAE>20% SSG 22dB GaN
|
|
10Expected 14/08/2026
|
|
|
Rp6.613.733
|
|
|
Rp5.910.898
|
|
Min.: 10
Mult.: 10
|
|
|
|
|
Gate Drivers SINGLE CHANNEL INTEGRATED
- NCP58920MNTWG
- onsemi
-
1:
Rp178.140
-
2.975Expected 13/10/2026
-
New Product
|
Mouser Part No
863-NCP58920MNTWG
New Product
|
onsemi
|
Gate Drivers SINGLE CHANNEL INTEGRATED
|
|
2.975Expected 13/10/2026
|
|
|
Rp178.140
|
|
|
Rp122.001
|
|
|
Rp92.647
|
|
|
Rp90.996
|
|
|
Rp90.996
|
|
Min.: 1
Mult.: 1
Max.: 300
:
3.000
|
|
|
|
|
GaN FETs GaN FET, 700V, 132m, 8x8
- NTMT170N70GN1TXG
- onsemi
-
1:
Rp46.966
-
2.500On Order
-
New Product
|
Mouser Part No
863-NTMT170N70GN1TXG
New Product
|
onsemi
|
GaN FETs GaN FET, 700V, 132m, 8x8
|
|
2.500On Order
|
|
|
Rp46.966
|
|
|
Rp29.904
|
|
|
Rp29.904
|
|
Min.: 1
Mult.: 1
Max.: 25
:
250
|
|
|
|
|
GaN FETs GaNEXUS FET, 100V, 2.7m, 3.3x3.3 Dual Cool
- NTLCC3D5N10GN1TWG
- onsemi
-
1:
Rp103.838
-
2.500Expected 04/06/2027
-
New Product
|
Mouser Part No
863-TLCC3D5N10GN1TWG
New Product
|
onsemi
|
GaN FETs GaNEXUS FET, 100V, 2.7m, 3.3x3.3 Dual Cool
|
|
2.500Expected 04/06/2027
|
|
|
Rp103.838
|
|
|
Rp68.064
|
|
|
Rp50.085
|
|
|
Rp44.581
|
|
|
Rp39.444
|
|
|
Rp39.444
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
|
|
GaN FETs GaNEXUS FET, 100V, 3.8m, 3.3x3.3 Dual Cool
- NTLCC5D0N10GN1TWG
- onsemi
-
1:
Rp74.118
-
2.500Expected 04/06/2027
-
New Product
|
Mouser Part No
863-TLCC5D0N10GN1TWG
New Product
|
onsemi
|
GaN FETs GaNEXUS FET, 100V, 3.8m, 3.3x3.3 Dual Cool
|
|
2.500Expected 04/06/2027
|
|
|
Rp74.118
|
|
|
Rp48.617
|
|
|
Rp36.142
|
|
|
Rp30.271
|
|
|
Rp28.253
|
|
|
Rp26.235
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
|
|
RF Amplifier Point-to-Point Radio and WiMAX GaN based High Power Amplifiers
- MGA-445940-02
- CML Micro
-
1:
Rp3.689.197
-
40On Order
|
Mouser Part No
938-MGA-445940-02
|
CML Micro
|
RF Amplifier Point-to-Point Radio and WiMAX GaN based High Power Amplifiers
|
|
40On Order
On Order:
20 Expected 12/08/2026
20 Expected 18/08/2026
Factory Lead Time:
27 Weeks
|
|
|
Rp3.689.197
|
|
|
Rp3.689.197
|
|
|
Rp3.394.377
|
|
Min.: 1
Mult.: 1
:
10
|
|
|
|
|
GaN FETs 10W, 4.0GHz, 830120P, GaN HEMT, PILL
- CGH40010P
- MACOM
-
1:
Rp2.025.031
-
117Expected 17/11/2026
|
Mouser Part No
941-CGH40010P
|
MACOM
|
GaN FETs 10W, 4.0GHz, 830120P, GaN HEMT, PILL
|
|
117Expected 17/11/2026
|
|
|
Rp2.025.031
|
|
|
Rp1.684.530
|
|
|
Rp1.653.708
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
Gate Drivers High power density 600 V half-bridge driver with two enhancement mode GaN power
- MASTERGAN5
- STMicroelectronics
-
1:
Rp113.378
-
62In Stock
|
Mouser Part No
511-MASTERGAN5
|
STMicroelectronics
|
Gate Drivers High power density 600 V half-bridge driver with two enhancement mode GaN power
|
|
62In Stock
|
|
|
Rp113.378
|
|
|
Rp86.960
|
|
|
Rp80.355
|
|
|
Rp73.017
|
|
|
View
|
|
|
Rp69.531
|
|
|
Rp67.513
|
|
|
Rp66.779
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
GaN FETs 100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN transistor
- SGT3D5R10MEB
- STMicroelectronics
-
1:
Rp68.247
-
400Expected 18/08/2026
-
New Product
|
Mouser Part No
511-SGT3D5R10MEB
New Product
|
STMicroelectronics
|
GaN FETs 100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN transistor
|
|
400Expected 18/08/2026
|
|
|
Rp68.247
|
|
|
Rp44.581
|
|
|
Rp32.472
|
|
|
Rp27.152
|
|
|
Rp23.483
|
|
|
View
|
|
|
Rp25.134
|
|
|
Rp21.281
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
|
|
|
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V
- STDRIVEG210QTR
- STMicroelectronics
-
1:
Rp55.038
-
700On Order
-
New Product
|
Mouser Part No
511-STDRIVEG210QTR
New Product
|
STMicroelectronics
|
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V
|
|
700On Order
|
|
|
Rp55.038
|
|
|
Rp41.095
|
|
|
Rp37.609
|
|
|
Rp33.757
|
|
|
View
|
|
|
Rp28.803
|
|
|
Rp31.922
|
|
|
Rp31.372
|
|
|
Rp28.803
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
|
|
|
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V
- STDRIVEG211QTR
- STMicroelectronics
-
1:
Rp55.221
-
700On Order
-
New Product
|
Mouser Part No
511-STDRIVEG211QTR
New Product
|
STMicroelectronics
|
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V
|
|
700On Order
|
|
|
Rp55.221
|
|
|
Rp41.095
|
|
|
Rp37.609
|
|
|
Rp33.757
|
|
|
View
|
|
|
Rp28.620
|
|
|
Rp31.922
|
|
|
Rp31.188
|
|
|
Rp29.537
|
|
|
Rp28.620
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
|
|
|
RF Amplifier 30 MHz to 2.7 GHz, SMA, GaN Bi-Directional Amplifier, High Power, 8W Psat, 36dB Tx Gain, 1 microsec speed, Manual T/R Control
- FM15B5003
- Fairview Microwave
-
1:
Rp197.138.961
-
1Factory Stock Available
-
New At Mouser
|
Mouser Part No
67-FM15B5003
New At Mouser
|
Fairview Microwave
|
RF Amplifier 30 MHz to 2.7 GHz, SMA, GaN Bi-Directional Amplifier, High Power, 8W Psat, 36dB Tx Gain, 1 microsec speed, Manual T/R Control
|
|
1Factory Stock Available
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
RF Amplifier 5.125 GHz to 5.875 GHz, SMA, GaN Bi-Directional Amplifier, C-Band, 10W Psat, 43dB Tx Gain, 20% Efficiency, 2 microsec speed, Autosensing
- FM15B5006
- Fairview Microwave
-
1:
Rp243.302.267
-
2Factory Stock Available
|
Mouser Part No
67-FM15B5006
|
Fairview Microwave
|
RF Amplifier 5.125 GHz to 5.875 GHz, SMA, GaN Bi-Directional Amplifier, C-Band, 10W Psat, 43dB Tx Gain, 20% Efficiency, 2 microsec speed, Autosensing
|
|
2Factory Stock Available
|
|
Min.: 1
Mult.: 1
|
|
|
Indonesia
