GaN Semiconductors

Results: 795
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
Renesas Electronics MOSFETs Ind. MOS REXFET-1 150V 3.9mohm TOLT Non-Stocked Lead-Time 12 Weeks
Min.: 1.300
Mult.: 1.300
: 1.300

Renesas Electronics MOSFETs Ind. MOS REXFET-1 150V 3.9mohm TOLL Non-Stocked Lead-Time 12 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Renesas Electronics MOSFETs Ind. MOS REXFET-1 100V 6.7mohm 5x6pkg Non-Stocked Lead-Time 12 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

Mini-Circuits RF Amplifier SMT MMIC, Low Noise, Linear, pHEMT Amplifier, 500 MHz to 2500 MHz, 50ohm Non-Stocked Lead-Time 17 Weeks
Min.: 1
Mult.: 1
: 500

CML Micro RF Amplifier 5.5W Ka-Band GaN Power Amplifier Non-Stocked Lead-Time 27 Weeks
Min.: 500
Mult.: 500
: 500
Renesas Electronics GaN FETs 700V, 135mohm GaN FET in 5x6 PQFN IP Non-Stocked Lead-Time 18 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

Renesas Electronics GaN FETs 700V, 135mohm GaN FET in 8x8 PQFN IP Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 650V, 35mohm GaN FET in TO247-4L Non-Stocked Lead-Time 18 Weeks
Min.: 1.200
Mult.: 600

Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TOLL Non-Stocked Lead-Time 18 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TOLL Non-Stocked Lead-Time 18 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Renesas Electronics GaN FETs 650V, 100mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 130mohm GaN FET in 8x8 PQFN PP Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 130mohm GaN FET in TO-220 Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 240mohm GaN FET in DPAK Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Non-Stocked Lead-Time 18 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

Renesas Electronics GaN FETs 700V, 480mohm GaN FET in DPAK Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

STMicroelectronics Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver Non-Stocked Lead-Time 26 Weeks
Min.: 1.560
Mult.: 1.560

STMicroelectronics Gate Drivers High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs Non-Stocked Lead-Time 26 Weeks
Min.: 1.560
Mult.: 1.560

STMicroelectronics Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver Non-Stocked Lead-Time 26 Weeks
Min.: 1.560
Mult.: 1.560