|
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
- IMZA120R040M2HXKSA1
- Infineon Technologies
-
1:
Rp228.224,24
-
238In Stock
-
New Product
|
Mouser Part No
726-IMZA120R040M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
|
|
238In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
48 A
|
51 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
- IMZA120R053M2HXKSA1
- Infineon Technologies
-
1:
Rp189.514,18
-
1.428In Stock
-
New Product
|
Mouser Part No
726-IMZA120R053M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
|
|
1.428In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
38 A
|
69 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
- IXSA110N65L2-7TR
- IXYS
-
1:
Rp238.131,08
-
900In Stock
-
New Product
|
Mouser Part No
747-IXSA110N65L2-7TR
New Product
|
IXYS
|
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
|
|
900In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7L
|
1 Channel
|
650 V
|
111 A
|
33 mOhms
|
- 5 V, + 20 V
|
4.5 V
|
125 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L
- IXSA40N120L2-7TR
- IXYS
-
1:
Rp180.157,72
-
790In Stock
-
New Product
|
Mouser Part No
747-IXSA40N120L2-7TR
New Product
|
IXYS
|
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L
|
|
790In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7L
|
1 Channel
|
1.2 kV
|
41 A
|
104 mOhms
|
- 5 V, + 20 V
|
4.5 V
|
53 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L
- IXSA65N120L2-7TR
- IXYS
-
1:
Rp218.684,32
-
813In Stock
-
New Product
|
Mouser Part No
747-IXSA65N120L2-7TR
New Product
|
IXYS
|
SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L
|
|
813In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7L
|
1 Channel
|
1.2 kV
|
65 A
|
53 mOhms
|
- 5 V, + 20 V
|
4.5 V
|
110 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L
- IXSA80N120L2-7TR
- IXYS
-
1:
Rp262.714,72
-
760In Stock
-
New Product
|
Mouser Part No
747-IXSA80N120L2-7TR
New Product
|
IXYS
|
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L
|
|
760In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7L
|
1 Channel
|
1.2 kV
|
79 A
|
39 mOhms
|
- 5 V, + 20 V
|
4.5 V
|
135 nC
|
- 55 C
|
+ 175 C
|
395 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL
- IXSG110N65L2K
- IXYS
-
1:
Rp238.131,08
-
2.084In Stock
-
New Product
|
Mouser Part No
747-IXSG110N65L2K
New Product
|
IXYS
|
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL
|
|
2.084In Stock
|
|
Min.: 1
Mult.: 1
:
2.000
|
|
|
SMD/SMT
|
TOLL-8
|
1 Channel
|
650 V
|
111 A
|
33 mOhms
|
- 5 V, + 20 V
|
4.5 V
|
125 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L
- IXSH100N65L2KHV
- IXYS
-
1:
Rp242.534,12
-
520In Stock
-
New Product
|
Mouser Part No
747-IXSH100N65L2KHV
New Product
|
IXYS
|
SiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L
|
|
520In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4L
|
1 Channel
|
650 V
|
99 A
|
33 mOhms
|
- 5 V, + 20 V
|
4.5 V
|
125 nC
|
- 55 C
|
+ 175 C
|
454 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L
- IXSH40N120L2KHV
- IXYS
-
1:
Rp181.625,40
-
374In Stock
-
New Product
|
Mouser Part No
747-IXSH40N120L2KHV
New Product
|
IXYS
|
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L
|
|
374In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4L
|
1 Channel
|
1.2 kV
|
41 A
|
104 mOhms
|
- 5 V, + 20 V
|
4.5 V
|
53 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L
- IXSH65N120L2KHV
- IXYS
-
1:
Rp223.270,82
-
537In Stock
-
New Product
|
Mouser Part No
747-IXSH65N120L2KHV
New Product
|
IXYS
|
SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L
|
|
537In Stock
|
|
Min.: 1
Mult.: 1
:
450
|
|
|
Through Hole
|
TO-247-4L
|
1 Channel
|
1.2 kV
|
65 A
|
52 mOhms
|
- 5 V, + 20 V
|
4.5 V
|
110 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L
- IXSH80N120L2KHV
- IXYS
-
1:
Rp272.805,02
-
292In Stock
-
New Product
|
Mouser Part No
747-IXSH80N120L2KHV
New Product
|
IXYS
|
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L
|
|
292In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4L
|
1 Channel
|
1.2 kV
|
79 A
|
39 mOhms
|
- 5 V, + 20 V
|
|
135 nC
|
- 55 C
|
+ 175 C
|
395 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs TO263 1.2KV 40A N-CH SIC
- SCT4036KWATL
- ROHM Semiconductor
-
1:
Rp295.737,52
-
954In Stock
-
New Product
|
Mouser Part No
755-SCT4036KWATL
New Product
|
ROHM Semiconductor
|
SiC MOSFETs TO263 1.2KV 40A N-CH SIC
|
|
954In Stock
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
TO-263-7LA
|
1 Channel
|
1.2 kV
|
40 A
|
47 mOhms
|
- 4 V, + 21 V
|
4.8 V
|
91 nC
|
|
+ 175 C
|
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs NSF017120T2A0/SOT8107/X.PAK
- NSF017120T2A0J
- Nexperia
-
1:
Rp373.341,10
-
596In Stock
-
New Product
|
Mouser Part No
771-NSF017120T2A0J
New Product
|
Nexperia
|
SiC MOSFETs NSF017120T2A0/SOT8107/X.PAK
|
|
596In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
SOT8107-2-7
|
1 Channel
|
1.2 kV
|
122 A
|
26 mOhms
|
- 10 V, + 22 V
|
2.9 V
|
190 nC
|
- 55 C
|
+ 175 C
|
517 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs NSF060120D7A0-Q/SOT8070/TO263-
- NSF060120D7A0-QJ
- Nexperia
-
1:
Rp177.038,90
-
523In Stock
-
New Product
|
Mouser Part No
771-NSF060120D7A0-QJ
New Product
|
Nexperia
|
SiC MOSFETs NSF060120D7A0-Q/SOT8070/TO263-
|
|
523In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
38 A
|
90 mOhms
|
- 10 V, + 22 V
|
2.9 V
|
57 nC
|
- 55 C
|
+ 175 C
|
183 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
- GP3T080A120H
- SemiQ
-
1:
Rp128.422,00
-
165In Stock
-
New Product
|
Mouser Part No
148-GP3T080A120H
New Product
|
SemiQ
|
SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
|
|
165In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4L
|
1 Channel
|
1.2 kV
|
70 A
|
100 mOhms
|
- 4.5 V, + 18 V
|
4 V
|
53 nC
|
- 55 C
|
+ 175 C
|
147 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC, MOSFET, 21mO, 1200V, TO-247-4 LP, Industrial
- C3M0021120K1
- Wolfspeed
-
1:
Rp353.160,50
-
384In Stock
|
Mouser Part No
941-C3M0021120K1
|
Wolfspeed
|
SiC MOSFETs SiC, MOSFET, 21mO, 1200V, TO-247-4 LP, Industrial
|
|
384In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
100 A
|
35 mOhms
|
- 8 V, + 19 V
|
3.8 V
|
177 nC
|
- 40 C
|
+ 175 C
|
405 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC, MOSFET, 32mO, 1200V, TO-247-4 LP, Industrial
- C3M0032120K1
- Wolfspeed
-
1:
Rp260.146,28
-
750In Stock
|
Mouser Part No
941-C3M0032120K1
|
Wolfspeed
|
SiC MOSFETs SiC, MOSFET, 32mO, 1200V, TO-247-4 LP, Industrial
|
|
750In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
69 A
|
55 mOhms
|
- 8 V, + 19 V
|
3.8 V
|
118 nC
|
- 40 C
|
+ 175 C
|
278 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1700V Through-Hole MOSFET N-Channel SiC
- CDMS24720-170 SL PBFREE
- Central Semiconductor
-
1:
Rp1.965.040,06
-
29In Stock
-
New Product
|
Mouser Part No
610-CDMS24720-170SL
New Product
|
Central Semiconductor
|
SiC MOSFETs 1700V Through-Hole MOSFET N-Channel SiC
|
|
29In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.7 kV
|
37 A
|
|
20 V
|
2.6 V
|
|
- 55 C
|
+ 175 C
|
28 W
|
Depletion
|
|
|
|
|
|
SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling
- IMLT65R026M2HXTMA1
- Infineon Technologies
-
1:
Rp255.376,32
-
21In Stock
-
3.600Expected 03/06/2027
-
New Product
|
Mouser Part No
726-IMLT65R026M2HXTM
New Product
|
Infineon Technologies
|
SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling
|
|
21In Stock
3.600Expected 03/06/2027
|
|
Min.: 1
Mult.: 1
:
1.800
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
82 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
365 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
- IMZA120R026M2HXKSA1
- Infineon Technologies
-
1:
Rp290.233,72
-
70In Stock
-
240Expected 29/10/2026
-
New Product
|
Mouser Part No
726-IMZA120R026M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
|
|
70In Stock
240Expected 29/10/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
69 A
|
34 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
- IMZA120R034M2HXKSA1
- Infineon Technologies
-
1:
Rp236.296,48
-
78In Stock
-
240Expected 11/02/2027
-
New Product
|
Mouser Part No
726-IMZA120R034M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
|
|
78In Stock
240Expected 11/02/2027
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
55 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs NSF030120D7A0-Q/SOT8070/TO263-
- NSF030120D7A0-QJ
- Nexperia
-
1:
Rp219.234,70
-
660In Stock
-
New Product
|
Mouser Part No
771-NSF030120D7A0-QJ
New Product
|
Nexperia
|
SiC MOSFETs NSF030120D7A0-Q/SOT8070/TO263-
|
|
660In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
69 A
|
45 mOhms
|
- 10 V, + 22 V
|
2.9 V
|
113 nC
|
- 55 C
|
+ 175 C
|
306 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs NSF040120D7A1-Q/SOT8070/TO263-
- NSF040120D7A1-QJ
- Nexperia
-
1:
Rp200.338,32
-
795In Stock
-
New Product
|
Mouser Part No
771-NSF040120D7A1-QJ
New Product
|
Nexperia
|
SiC MOSFETs NSF040120D7A1-Q/SOT8070/TO263-
|
|
795In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
54 A
|
60 mOhms
|
- 10 V, + 22 V
|
2.9 V
|
81 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs NSF040120D7A1/SOT8070/TO263-7L
- NSF040120D7A1J
- Nexperia
-
1:
Rp192.816,46
-
795In Stock
-
New Product
|
Mouser Part No
771-NSF040120D7A1J
New Product
|
Nexperia
|
SiC MOSFETs NSF040120D7A1/SOT8070/TO263-7L
|
|
795In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
54 A
|
60 mOhms
|
- 10 V, + 22 V
|
2.9 V
|
81 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC, MOSFET, 900mO, 1700V, TO-247-3PF, Industrial
- C3M0900170M
- Wolfspeed
-
1:
Rp98.334,56
-
271In Stock
-
New Product
|
Mouser Part No
941-C3M0900170M
New Product
|
Wolfspeed
|
SiC MOSFETs SiC, MOSFET, 900mO, 1700V, TO-247-3PF, Industrial
|
|
271In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-3PF-3
|
1 Channel
|
1700 V
|
4 A
|
1.25 Ohms
|
- 8 V, + 20 V
|
4.2 V
|
10 nC
|
- 55 C
|
+ 175 C
|
33 W
|
Enhancement
|
|
|
|