|
|
SiC MOSFETs SiC, MOSFET 25 mohm, 650V TO-263-7XL, Industrial
- C3M0025065J1
- Wolfspeed
-
1:
Rp255.743,24
-
99In Stock
|
Mouser Part No
941-C3M0025065J1
|
Wolfspeed
|
SiC MOSFETs SiC, MOSFET 25 mohm, 650V TO-263-7XL, Industrial
|
|
99In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
80 A
|
34 mOhms
|
- 8 V, + 19 V
|
3.6 V
|
109 nC
|
- 40 C
|
+ 150 C
|
271 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC, MOSFET, 60mO, 650V, TO-247-3, Industrial
- C3M0060065D
- Wolfspeed
-
1:
Rp176.855,44
-
196In Stock
|
Mouser Part No
941-C3M0060065D
|
Wolfspeed
|
SiC MOSFETs SiC, MOSFET, 60mO, 650V, TO-247-3, Industrial
|
|
196In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
29 A
|
60 mOhms
|
- 4 V, + 15 V
|
3.6 V
|
46 nC
|
- 40 C
|
+ 175 C
|
150 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 18A,1200V Through-Hole MOSFET N-Channel SiC
- CDMS24783-120 SL
- Central Semiconductor
-
1:
Rp525.245,98
-
40In Stock
-
New Product
|
Mouser Part No
610-CDM24783120SL
New Product
|
Central Semiconductor
|
SiC MOSFETs 18A,1200V Through-Hole MOSFET N-Channel SiC
|
|
40In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
18 A
|
150 mOhms
|
20 V
|
4 V
|
55 C
|
- 55 C
|
+ 175 C
|
28 W
|
Depletion
|
|
|
|
|
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
- IMZA120R017M2HXKSA1
- Infineon Technologies
-
1:
Rp393.521,70
-
10In Stock
-
480On Order
-
New Product
|
Mouser Part No
726-IMZA120R017M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
|
|
10In Stock
480On Order
Stock:
10 Can Dispatch Immediately
On Order:
240 Expected 12/11/2026
240 Expected 04/02/2027
Factory Lead Time:
53 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
97 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R040M1HXKSA1
- Infineon Technologies
-
1:
Rp259.412,44
-
10In Stock
-
2.640On Order
-
NRND
|
Mouser Part No
726-IMW120R040M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package
|
|
10In Stock
2.640On Order
Stock:
10 Can Dispatch Immediately
On Order:
1.680 Expected 04/02/2027
240 Expected 16/09/2027
720 Expected 14/10/2027
Factory Lead Time:
52 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
|
1 Channel
|
1.2 kV
|
55 A
|
39 mOhms
|
- 10 V, + 23 V
|
4.2 V
|
39 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC Power MOSFET Module 650V, 32mohm H-Bridge
- NXVF6532M3TG01
- onsemi
-
1:
Rp451.311,60
-
95In Stock
-
Factory Special Order
|
Mouser Part No
863-NXVF6532M3TG01
Factory Special Order
|
onsemi
|
SiC MOSFETs SiC Power MOSFET Module 650V, 32mohm H-Bridge
|
|
95In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
APM-16
|
4 Channel
|
650 V
|
31 A
|
44 mOhms
|
- 8 V, + 22 C
|
4 V
|
58 nC
|
- 55 C
|
+ 175 C
|
65.2 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1700V 20mohm TO-247-4 G3R SiC MOSFET
- G3R20MT17K
- GeneSiC Semiconductor
-
1:
Rp1.966.691,20
-
53In Stock
-
150Expected 21/04/2027
|
Mouser Part No
905-G3R20MT17K
|
GeneSiC Semiconductor
|
SiC MOSFETs 1700V 20mohm TO-247-4 G3R SiC MOSFET
|
|
53In Stock
150Expected 21/04/2027
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.7 kV
|
101 A
|
20 mOhms
|
- 5 V, + 15 V
|
2.7 V
|
256 nC
|
- 55 C
|
+ 175 C
|
569 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1200V 30mohm TO-247-4 G3R SiC MOSFET
- G3R30MT12K
- GeneSiC Semiconductor
-
1:
Rp413.335,38
-
289In Stock
|
Mouser Part No
905-G3R30MT12K
|
GeneSiC Semiconductor
|
SiC MOSFETs 1200V 30mohm TO-247-4 G3R SiC MOSFET
|
|
289In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
70 A
|
30 mOhms
|
- 5 V, + 15 V
|
2.7 V
|
118 nC
|
- 55 C
|
+ 175 C
|
281 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1700V 45mohm TO-247-4 G3R SiC MOSFET
- G3R45MT17K
- GeneSiC Semiconductor
-
1:
Rp606.702,22
-
109In Stock
|
Mouser Part No
905-G3R45MT17K
|
GeneSiC Semiconductor
|
SiC MOSFETs 1700V 45mohm TO-247-4 G3R SiC MOSFET
|
|
109In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.7 kV
|
48 A
|
45 mOhms
|
- 5 V, + 15 V
|
2.7 V
|
106 nC
|
- 55 C
|
+ 175 C
|
284 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC, MOSFET 45mO, 650V TO-263-7XL, T&R, Industrial
- C3M0045065J1-TR
- Wolfspeed
-
1:
Rp196.302,20
-
1In Stock
|
Mouser Part No
941-C3M0045065J1-TR
|
Wolfspeed
|
SiC MOSFETs SiC, MOSFET 45mO, 650V TO-263-7XL, T&R, Industrial
|
|
1In Stock
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
47 A
|
60 mOhms
|
- 8 V, + 19 V
|
3.6 V
|
61 nC
|
- 40 C
|
+ 150 C
|
147 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1700V 160mohm TO-247-3 G3R SiC MOSFET
- G3R160MT17D
- GeneSiC Semiconductor
-
1:
Rp224.371,58
-
5In Stock
-
1.800On Order
|
Mouser Part No
905-G3R160MT17D
|
GeneSiC Semiconductor
|
SiC MOSFETs 1700V 160mohm TO-247-3 G3R SiC MOSFET
|
|
5In Stock
1.800On Order
Stock:
5 Can Dispatch Immediately
On Order:
600 Expected 08/01/2027
1.200 Expected 08/02/2027
Factory Lead Time:
26 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.7 kV
|
17 A
|
160 mOhms
|
- 5 V, + 15 V
|
2.7 V
|
29 nC
|
- 55 C
|
+ 175 C
|
138 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2
- IMZA65R026M2HXKSA1
- Infineon Technologies
-
1:
Rp280.326,88
-
2.313On Order
-
New At Mouser
|
Mouser Part No
726-IMZA65R026M2HXKS
New At Mouser
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2
|
|
2.313On Order
On Order:
1.593 Expected 17/12/2026
240 Expected 03/06/2027
480 Expected 05/08/2027
Factory Lead Time:
52 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
64 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs SiC, MOSFET, 40mO, 1200V, TO-247-4, Industrial
- C3M0040120K
- Wolfspeed
-
1:
Rp250.606,36
-
2.221On Order
|
Mouser Part No
941-C3M0040120K
|
Wolfspeed
|
SiC MOSFETs SiC, MOSFET, 40mO, 1200V, TO-247-4, Industrial
|
|
2.221On Order
On Order:
1.321 Expected 27/11/2026
900 Expected 11/12/2026
Factory Lead Time:
22 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
66 A
|
40 mOhms
|
- 4 V, + 15 V
|
3.6 V
|
99 nC
|
- 40 C
|
+ 175 C
|
326 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-4 package
- IMZA120R007M1HXKSA1
- Infineon Technologies
-
1:
Rp1.033.063,26
-
1.865On Order
-
NRND
|
Mouser Part No
726-IMZA120R007M1HXK
NRND
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-4 package
|
|
1.865On Order
On Order:
665 Expected 11/02/2027
480 Expected 16/09/2027
Factory Lead Time:
52 Weeks
|
|
Min.: 1
Mult.: 1
Max.: 240
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
225 A
|
7 mOhms
|
- 10 V, + 23 V
|
4.2 V
|
220 nC
|
- 55 C
|
+ 150 C
|
750 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
- IMZA120R020M1HXKSA1
- Infineon Technologies
-
1:
Rp436.634,80
-
2.877Expected 20/12/2026
-
NRND
|
Mouser Part No
726-IMZA120R020M1HXK
NRND
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
|
|
2.877Expected 20/12/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
98 A
|
19 mOhms
|
- 10 V, + 23 V
|
4.2 V
|
83 nC
|
- 55 C
|
+ 150 C
|
375 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
- C3M0032120D
- Wolfspeed
-
1:
Rp260.146,28
-
449Expected 23/11/2026
|
Mouser Part No
941-C3M0032120D
|
Wolfspeed
|
SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
|
|
449Expected 23/11/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
63 A
|
32 mOhms
|
- 4 V, + 15 V
|
3.6 V
|
114 nC
|
- 40 C
|
+ 175 C
|
283 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs SiC, MOSFET, 75mO, 1200V, TO-247-3, 175C capable, Industrial
- C3M0075120D-A
- Wolfspeed
-
1:
Rp174.470,46
-
883Expected 13/11/2026
|
Mouser Part No
941-C3M0075120D-A
|
Wolfspeed
|
SiC MOSFETs SiC, MOSFET, 75mO, 1200V, TO-247-3, 175C capable, Industrial
|
|
883Expected 13/11/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
32 A
|
90 mOhms
|
- 8 V, + 19 V
|
3.6 V
|
54 nC
|
- 40 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
Rp423.058,76
-
998Expected 04/06/2027
|
Mouser Part No
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
998Expected 04/06/2027
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
Rp472.776,42
-
478On Order
-
New At Mouser
|
Mouser Part No
726-IMW65R010M2HXKSA
New At Mouser
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
|
|
478On Order
On Order:
238 Expected 03/11/2026
240 Expected 19/10/2027
Factory Lead Time:
52 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
130 A
|
13.1 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2
- IMW65R060M2HXKSA1
- Infineon Technologies
-
1:
Rp165.480,92
-
2.862Expected 05/08/2027
-
New At Mouser
|
Mouser Part No
726-IMW65R060M2HXKSA
New At Mouser
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2
|
|
2.862Expected 05/08/2027
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
32.8 A
|
73 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
130 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
Rp525.062,52
-
228In Stock
-
240Expected 26/11/2026
-
New Product
|
Mouser Part No
726-IMZA120R012M2HXK
New Product
|
Infineon Technologies
|
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
|
|
228In Stock
240Expected 26/11/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
1 Channel
|
1.2 kV
|
|
16 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
480 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
- IMZA65R010M2HXKSA1
- Infineon Technologies
-
1:
Rp505.065,38
-
719On Order
-
New At Mouser
|
Mouser Part No
726-IMZA65R010M2HXKS
New At Mouser
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
|
|
719On Order
On Order:
479 Expected 22/07/2027
240 Expected 05/08/2027
Factory Lead Time:
52 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
144 A
|
13.1 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
Rp168.966,66
-
1.680Expected 21/10/2027
-
New At Mouser
|
Mouser Part No
726-IMZC120R078M2HXK
New At Mouser
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
1.680Expected 21/10/2027
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFETs 750-V N-CHANNEL SIC MOSFET
- MXP075A040SL-GE3
- Vishay / Siliconix
-
1:
Rp240.516,06
-
600Expected 14/04/2027
-
New Product
|
Mouser Part No
78-MXP075A040SL-GE3
New Product
|
Vishay / Siliconix
|
SiC MOSFETs 750-V N-CHANNEL SIC MOSFET
|
|
600Expected 14/04/2027
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247AD-4L
|
1 Channel
|
750 V
|
51 A
|
50 mOhms
|
- 10 V, + 22 V
|
2.65 V
|
77 nC
|
- 55 C
|
+ 175 C
|
208 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
- MXP120A160SL-GE3
- Vishay / Siliconix
-
1:
Rp197.036,04
-
600Expected 14/04/2027
-
New Product
|
Mouser Part No
78-MXP120A160SL-GE3
New Product
|
Vishay / Siliconix
|
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
|
|
600Expected 14/04/2027
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247AD-4L
|
1 Channel
|
1.2 kV
|
18 A
|
200 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
25 nC
|
- 55 C
|
+ 175 C
|
109 W
|
Enhancement
|
|
|
|