MOSFETs SiC MOSFETs

Results: 161
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
Wolfspeed SiC MOSFETs SiC, MOSFET 25 mohm, 650V TO-263-7XL, Industrial 99In Stock
Rp255.743,24
Rp150.437,20
Rp150.253,74
Rp149.703,36
Rp144.566,48
Min.: 1
Mult.: 1
SMD/SMT 1 Channel 650 V 80 A 34 mOhms - 8 V, + 19 V 3.6 V 109 nC - 40 C + 150 C 271 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 60mO, 650V, TO-247-3, Industrial 196In Stock
Rp176.855,44
Rp95.032,28
Rp87.510,42
Rp84.208,14
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 29 A 60 mOhms - 4 V, + 15 V 3.6 V 46 nC - 40 C + 175 C 150 W Enhancement
Central Semiconductor SiC MOSFETs 18A,1200V Through-Hole MOSFET N-Channel SiC 40In Stock
Rp525.245,98
Rp373.524,56
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 18 A 150 mOhms 20 V 4 V 55 C - 55 C + 175 C 28 W Depletion
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 10In Stock
480On Order
Rp393.521,70
Rp293.902,92
Rp254.092,10
Rp224.738,50
Min.: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 97 A 23 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package 10In Stock
2.640On Order
Rp259.412,44
Rp197.586,42
Rp164.563,62
Rp146.584,54
Rp137.044,62
Min.: 1
Mult.: 1
Through Hole 1 Channel 1.2 kV 55 A 39 mOhms - 10 V, + 23 V 4.2 V 39 nC - 55 C + 150 C 227 W Enhancement
onsemi SiC MOSFETs SiC Power MOSFET Module 650V, 32mohm H-Bridge 95In Stock
Rp451.311,60
Rp425.260,28
Min.: 1
Mult.: 1
Through Hole APM-16 4 Channel 650 V 31 A 44 mOhms - 8 V, + 22 C 4 V 58 nC - 55 C + 175 C 65.2 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 20mohm TO-247-4 G3R SiC MOSFET 53In Stock
150Expected 21/04/2027
Rp1.966.691,20
Rp1.824.142,78
Rp1.823.592,40
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 101 A 20 mOhms - 5 V, + 15 V 2.7 V 256 nC - 55 C + 175 C 569 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1200V 30mohm TO-247-4 G3R SiC MOSFET 289In Stock
Rp413.335,38
Rp379.762,20
Rp367.103,46
Rp348.757,46
Rp344.170,96
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 70 A 30 mOhms - 5 V, + 15 V 2.7 V 118 nC - 55 C + 175 C 281 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 45mohm TO-247-4 G3R SiC MOSFET 109In Stock
Rp606.702,22
Rp556.617,64
Rp537.904,72
Rp520.476,02
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.7 kV 48 A 45 mOhms - 5 V, + 15 V 2.7 V 106 nC - 55 C + 175 C 284 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET 45mO, 650V TO-263-7XL, T&R, Industrial 1In Stock
Cut Tape
Rp196.302,20
Rp108.975,24
Rp103.471,44
Rp96.499,96
Reel
Rp96.499,96
Min.: 1
Mult.: 1
: 800
SMD/SMT 1 Channel 650 V 47 A 60 mOhms - 8 V, + 19 V 3.6 V 61 nC - 40 C + 150 C 147 W Enhancement
GeneSiC Semiconductor SiC MOSFETs 1700V 160mohm TO-247-3 G3R SiC MOSFET 5In Stock
1.800On Order
Rp224.371,58
Rp202.906,76
Rp195.017,98
Rp183.460,00
Rp177.222,36
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.7 kV 17 A 160 mOhms - 5 V, + 15 V 2.7 V 29 nC - 55 C + 175 C 138 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2
2.313On Order
Rp280.326,88
Rp187.312,66
Rp162.545,56
Rp155.207,16
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Wolfspeed SiC MOSFETs SiC, MOSFET, 40mO, 1200V, TO-247-4, Industrial
2.221On Order
Rp250.606,36
Rp160.344,04
Rp149.152,98
Rp134.476,18
Rp127.688,16
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 66 A 40 mOhms - 4 V, + 15 V 3.6 V 99 nC - 40 C + 175 C 326 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-4 package
1.865On Order
Rp1.033.063,26
Rp881.158,38
Rp726.868,52
Min.: 1
Mult.: 1
Max.: 240
Through Hole TO-247-4 1 Channel 1.2 kV 225 A 7 mOhms - 10 V, + 23 V 4.2 V 220 nC - 55 C + 150 C 750 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
2.877Expected 20/12/2026
Rp436.634,80
Rp349.674,76
Rp302.342,08
Rp286.197,60
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 98 A 19 mOhms - 10 V, + 23 V 4.2 V 83 nC - 55 C + 150 C 375 W Enhancement
Wolfspeed SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET
449Expected 23/11/2026
Rp260.146,28
Rp145.667,24
Rp145.483,78
Rp139.429,60
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 63 A 32 mOhms - 4 V, + 15 V 3.6 V 114 nC - 40 C + 175 C 283 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 75mO, 1200V, TO-247-3, 175C capable, Industrial
883Expected 13/11/2026
Rp174.470,46
Rp93.564,60
Rp86.226,20
Rp82.557,00
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 32 A 90 mOhms - 8 V, + 19 V 3.6 V 54 nC - 40 C + 175 C 136 W Enhancement


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
998Expected 04/06/2027
Cut Tape
Rp423.058,76
Rp274.639,62
Rp274.089,24
Rp259.045,52
Reel
Rp241.983,74
Min.: 1
Mult.: 1
: 1.000
SMD/SMT H2PAK-7 1 Channel 900 V 110 A 12 mOhms - 18 V, + 18 V 4.2 V 138 nC - 55 C + 175 C 625 W Enhancement AEC-Q101
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
478On Order
Rp472.776,42
Rp300.140,56
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 130 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2
2.862Expected 05/08/2027
Rp165.480,92
Rp88.427,72
Rp79.805,10
Rp77.053,20
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 228In Stock
240Expected 26/11/2026
Rp525.062,52
Rp420.306,86
Rp363.434,26
Rp344.170,96
Min.: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
719On Order
Rp505.065,38
Rp358.480,84
Rp326.008,42
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 144 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 78 mohm G2
1.680Expected 21/10/2027
Rp168.966,66
Rp115.396,34
Rp95.215,74
Rp84.758,52
Rp79.254,72
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 28 A 78 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Vishay / Siliconix SiC MOSFETs 750-V N-CHANNEL SIC MOSFET
600Expected 14/04/2027
Rp240.516,06
Rp136.310,78
Rp126.220,48
Rp110.076,00
Min.: 1
Mult.: 1
Through Hole TO-247AD-4L 1 Channel 750 V 51 A 50 mOhms - 10 V, + 22 V 2.65 V 77 nC - 55 C + 175 C 208 W Enhancement
Vishay / Siliconix SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
600Expected 14/04/2027
Rp197.036,04
Rp109.525,62
Rp101.086,46
Rp86.226,20
Rp86.042,74
Min.: 1
Mult.: 1
Through Hole TO-247AD-4L 1 Channel 1.2 kV 18 A 200 mOhms - 10 V, + 22 V 3.1 V 25 nC - 55 C + 175 C 109 W Enhancement