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IS62WV6416FBLL-45TLI

ISSI

Mouser No:

870-62WV6416FBLL45TI

Mfr. No:

IS62WV6416FBLL-45TLI

Mfr.:

ISSI

Description:

SRAM 1Mb, Low Power/Power Saver,Async,64K x 16,45ns,2.2v 3.6v,44 Pin TSOP II, RoHS

Datasheet:

IS62WV6416FBLL-45TLI Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	SRAM
RoHS:
Memory Size:	1 Mbit
Organisation:	128 k x 16
Access Time:	45 ns
Interface Type:	Parallel
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.2 V
Supply Current - Max:	26 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package/Case:	mBGA-48
Packaging:	Tray
Brand:	ISSI
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	IS62WV6416FBLL
Factory Pack Quantity:	135
Subcategory:	Memory & Data Storage
Type:	Asynchronous

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Datasheet

IS62WV6416FBLL-45TLI Datasheet (PDF)

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Compliance Codes

USHTS:: 8542320041
ECCN:: 3A991.b.2.b

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

ISSI

Serial RAM Devices

Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

QuadRAM Devices

Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

Portfolio of high-speed, low pin count memory products that utilize the JEDEC xSPI interface.

IS62WVS Serial SRAMs

Fabricated using high-performance CMOS technology to offer 20MHz clock rate and 4µA standby current.

Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp75.769	Rp75.769
	Rp70.816	Rp708.160
	Rp68.798	Rp1.719.950
	Rp68.614	Rp18.525.780