+ 85 C DRAM

Results: 741
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Type Memory Size Data Bus Width Maximum Clock Frequency Package/Case Organisation Access Time Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Series Packaging
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
240Expected 10/08/2026
Min.: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 143 MHz BGA-90 4 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM Automotive (-40 to +85C), 64M, 3.3V, SDRAM, 4Mx16, 166MHz, 54 pin TSOP II (400 mil) RoHS
108On Order
Min.: 1
Mult.: 1

SDRAM 64 Mbit 16 bit 166 MHz TSOP-II-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 86 pin TSOP II (400 mil) RoHS
108On Order
Min.: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT
1.118Expected 30/07/2027
Min.: 1
Mult.: 1

SDRAM - LPDDR2 4 Gbit 32 bit 533 MHz BGA-134 128 M x 32 1.14 V 1.95 V - 40 C + 85 C Tray
Intelligent Memory DRAM LPDDR4x 24Gb 768Mx32 2133MHz FBGA200 -20C to 85C Non-Stocked Lead-Time 10 Weeks
Min.: 120
Mult.: 120

SDRAM - LPDDR4X 24 Gbit 32 bit 2.133 GHz FBGA-200 768 M x 32 600 mV 1.8 V - 20 C + 85 C LPDDR4x Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166Mhz (1666Mbps), -40C to +85C, FBGA-54 Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 166 MHz FBGA-54 16 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C IM2516SD Tray
Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 2Mx32, 166MHz (166Mbps), -40C to +85C, FBGA-54 Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

SDRAM 64 Mbit 32 bit 166 MHz FBGA-90 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C IM6432SD Tray
Intelligent Memory DRAM LPDDR4x 8Gb 256Mx32 2133MHz FBGA200 -20C to 85C Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

SDRAM - LPDDR4X 8 Gbit 32 bit 2.133 GHz FBGA-200 256 M x 32 600 mV 1.8 V - 20 C + 85 C LPDDR4x Tray
Apacer DRAM DDR5 REG DIMM 4800 2048x8 32GB SA FLF HF Non-Stocked Lead-Time 4 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR5 32 GB 16 bit 4.8 GHz FBGA-288 4 G x 80 4.25 V 15 V 0 C + 85 C Bulk
SMARTsemi DRAM DRAM DDR3(L) 4GB 512MX8 1866Mbps 1.35V/1.5V 78-FBGA Industrial N/A
Min.: 1
Mult.: 1

SDRAM - DDR3L 4 Gbit 8 bit 933 MHz FBGA-78 512 M x 8 1.283 V 1.575 V - 40 C + 85 C KTDM Tray
AP Memory DRAM IoT RAM 128Mb QSPI (x1,x4) SDR 144/84MHz, HS, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 15 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 128 Mbit 4 bit 144 MHz WLCSP-15 16 M x 8 1.62 V 1.98 V - 40 C + 85 C Reel
AP Memory DRAM IoT RAM 128Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS12808O-OBR-WB same density NRND Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 128 Mbit 8 bit / 16 bit 200 MHz WLCSP-24 16 M x 8/8 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
AP Memory DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144MHz, 1.8V, USON8 Non-Stocked Lead-Time 20 Weeks
Min.: 10.000
Mult.: 10.000
: 10.000

PSRAM (Pseudo SRAM) 16 Mbit 4 bit / 1 bit 144 MHz USON-8 2 M x 8 1.62 V 1.98 V - 25 C + 85 C IoT RAM Reel
AP Memory DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 16 Mbit 4 bit 84 MHz/144 MHz WLCSP-8 2 M x 8 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel

AP Memory DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, Ind. Temp., SOP8 Non-Stocked Lead-Time 20 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

PSRAM (Pseudo SRAM) 16 Mbit 4 bit 84 MHz/144 MHz SOP-8 2 M x 8 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
AP Memory DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144/84MHz, RBX, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 16 Mbit 4 bit / 1 bit 84 MHz/144 MHz WLCSP-8 2 M x 8 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
AP Memory DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) Non-Stocked Lead-Time 20 Weeks
Min.: 4.800
Mult.: 4.800

PSRAM (Pseudo SRAM) 256 Mbit 8 bit 200 MHz BGA-24 32 M x 8 6.5 ns 1.62 V 1.98 V - 40 C + 85 C Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS256XXN-OB9-WA same density NRND Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 200 MHz WLCSP-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
AP Memory DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 144MHz, HS, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 64 Mbit 4 bit / 1 bit 144 MHz WLCSP-8 8 M x 8 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz WLCSP-13 8 M x 8 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
Infineon Technologies S80KS2564GACHA040
Infineon Technologies DRAM SPCM Non-Stocked Lead-Time 26 Weeks
Min.: 260
Mult.: 260

HyperRAM 256 Mbit 16 bit 200 MHz FBGA-49 35 ns 1.7 V 2 V - 40 C + 85 C Tray
Infineon Technologies S80KS2564GACHA043
Infineon Technologies DRAM SPCM Non-Stocked Lead-Time 26 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

HyperRAM 256 Mbit 32 bit 200 MHz FBGA-49 35 ns 1.7 V 2 V - 40 C + 85 C Reel
AP Memory APS12808O-OBR-WB
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 15 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 128 Mbit 8 bit 200 MHz WLCSP-15 16 M x 8 1.62 V 1.98 V - 40 C + 85 C Reel
AP Memory APS256XXN-OB9-WA
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 250 MHz WLCSP-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS Non-Stocked Lead-Time 12 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

PSRAM (Pseudo SRAM) 32 Mbit 8 bit 104 MHz SOIC-8 4 M x 8 7 ns 1.65 V 1.95 V - 40 C + 85 C Reel