JDV2S41AFS,L3M
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See Product Specifications
See Product Specifications
757-JDV2S41AFSL3M
JDV2S41AFS,L3M
Mfr.:
Description:
Varactor Diodes Variable capacitance diode for electronic tuning applications
Varactor Diodes Variable capacitance diode for electronic tuning applications
Lifecycle:
New At Mouser
Datasheet:
Availability
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Stock:
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0An unexpected error occurred. Please try again later.
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On Order:
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30.036Expected 28/08/2026
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Factory Lead Time:
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11Weeks Estimated factory production time for quantities greater than shown.
Pricing (IDR)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| Rp32.106 | Rp32.106 | |
| Rp19.814 | Rp198.140 | |
| Rp13.117 | Rp1.311.700 | |
| Rp10.310 | Rp5.155.000 | |
| Rp8.806 | Rp8.806.000 | |
| Rp7.981 | Rp19.952.500 | |
| Rp7.082 | Rp35.410.000 | |
| Rp6.843 | Rp68.430.000 | |
| Rp6.678 | Rp166.950.000 |
Datasheet
Application Notes
- Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
- Basics of Diodes (Power Losses and Thermal Design)
- Basics of Diodes (Types and Overview of Diodes)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Precautions for using Radio-frequency semiconductor devices
Product Catalogs
Compliance Codes
- CNHTS:
- 8541590000
- CAHTS:
- 8541100090
- USHTS:
- 8541100080
- TARIC:
- 8541100000
- ECCN:
- EAR99
Origin Classifications
- Country of Origin:
- Thailand
- Assembly Country of Origin:
- Not available
- Country of Diffusion:
- Not available
Indonesia
