GaN Semiconductors

Results: 723
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
onsemi NCP1568G03DBR2G
onsemi AC/DC Converters ACTIVE CLAMP FLYBACK 2.322In Stock
Min.: 1
Mult.: 1
: 2.500

onsemi NCP1568G04DBR2G
onsemi AC/DC Converters ACTIVE CLAMP FLYBACK 2.418In Stock
Min.: 1
Mult.: 1
: 2.500

Texas Instruments Gate Drivers 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHR 37In Stock
Min.: 1
Mult.: 1
: 250

Texas Instruments Gate Drivers 600-V 150-m? GaN wit h integrated driver A 595-LMG3410R150RWHR 110In Stock
Min.: 1
Mult.: 1
: 250

Texas Instruments Gate Drivers 600-V 150-m? GaN wit h integrated driver A 595-LMG3411R150RWHR 140In Stock
Min.: 1
Mult.: 1
: 250

STMicroelectronics GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor 374In Stock
Min.: 1
Mult.: 1
: 1.800

STMicroelectronics GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor 728In Stock
Min.: 1
Mult.: 1
: 3.000

STMicroelectronics GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor 768In Stock
Min.: 1
Mult.: 1
: 3.000

STMicroelectronics Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 879In Stock
Min.: 1
Mult.: 1
: 3.000

EPC GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP 2.139In Stock
Min.: 1
Mult.: 1
: 2.500

EPC GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP 900In Stock
Min.: 1
Mult.: 1
: 1.000

Infineon Technologies GaN FETs CoolGaN Drive HB 600 V G5 2.393In Stock
Min.: 1
Mult.: 1
: 3.000
Infineon Technologies GaN FETs 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.646In Stock
Min.: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.667In Stock
Min.: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.345In Stock
Min.: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs CoolGaN Bidirectional Switch 3.138In Stock
Min.: 1
Mult.: 1
: 4.000
onsemi GaN FETs GaN FET, 700V, 75m, DPAK 2.460In Stock
Min.: 1
Mult.: 1
Max.: 250
: 250

onsemi GaN FETs GaN FET, 700V, 75m, 8x8 2.463In Stock
Min.: 1
Mult.: 1
Max.: 246
: 250

onsemi GaN FETs GaN FET, 700V,101m, 8x8 2.472In Stock
Min.: 1
Mult.: 1
Max.: 248
: 250

onsemi GaN FETs GaN FET, 700V, 132m, 8x8 2.500In Stock
Min.: 1
Mult.: 1
Max.: 250
: 250

STMicroelectronics GaN FETs 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor 637In Stock
Min.: 1
Mult.: 1
: 3.000

STMicroelectronics GaN FETs 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor 790In Stock
Min.: 1
Mult.: 1
: 3.000

STMicroelectronics GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor 693In Stock
Min.: 1
Mult.: 1
Max.: 100
: 3.000

STMicroelectronics GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor 552In Stock
Min.: 1
Mult.: 1
: 2.500

STMicroelectronics Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 699In Stock
Min.: 1
Mult.: 1
: 3.000