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Diodes Incorporated API21552Q Isolated Dual-Channel Gate Drivers

Diodes Inc. API21552Q Isolated Dual-Channel Gate Drivers are AEC-Q100 qualified and designed for demanding automotive and industrial power applications. Featuring up to 4A peak source and 6A peak sink drive current, these devices provide reliable control of GaN, MOSFET, SiC, and IGBT power switches while supporting output supply voltages up to 30V. The API21552Q drivers offer fast switching performance with a typical 40ns propagation delay, low pulse-width distortion, and excellent channel-to-channel matching, helping to optimize efficiency in high-frequency power conversion systems.

Built for robust operation in electrically noisy environments, the API21552Q delivers more than 150V/ns common-mode transient immunity (CMTI) and incorporates a 5ns deglitch filter to improve noise rejection. The devices provide 5700VRMS reinforced isolation and are certified to key safety standards, making the drivers well-suited for HEV and EV onboard chargers, traction inverter controls, motor drives, and isolated DC-DC converters. Additional features such as an active pull-down function, external disable control, multiple undervoltage lockout (UVLO) options (5V, 8V, and 12V), and operation across a -40°C to +125°C temperature range enhance system reliability and design flexibility in next-generation automotive power electronics.

Features

  • Isolated dual-channel gate drivers
  • 3V to 5.5V input side supply voltage
  • Up to 4A peak source and 6A peak sink current output
  • Common-Mode Transient Immunity (CMTI) greater than 150V/ns
  • Up to 30V VDD output drive supply
  • 5V, 8V, and 12V VDD UVLO options
  • Switching parameters
    • 40ns typical propagation delay
    • 8ns maximum delay matching
    • 7ns maximum pulse-width distortion
    • 10μs maximum VDD power-up delay
  • Isolation barrier life > 40 years
  • 5ns integrated deglitch filter
  • Active pulldown feature
  • Packaged in SO-16W (Type CJ)
  • -40°C to +125°C operating temperature range
  • Safety-related certifications
    • 8000VPK SO-16W (Type CJ) per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5700VRMS SO-16W (Type CJ) for 1 minute per UL 1577
    • CQC certification per GB4943.1
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • 4kV device HBM ESD
    • 1.5kV device CDM ESD
  • Totally lead-free and fully RoHS compliant
  • Halogen-/antimony-free, Green device
  • Suitable for automotive applications requiring specific change control, AEC-Q100 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities

Applications

  • HEV and EV onboard chargers
  • Motor drives in automotive
  • Inverter control in HEV and EV
  • Isolated DC-DC converters in automotive

Specifications

  • Maximum power ratings
    • 950mW power dissipation (both sides)
    • 50mW power dissipation on the transmitter side
    • 450mW power dissipation on each driver side
  • Supply current
    • 2.5mA maximum VCC quiescent current, 1.5mA typical
    • 3.7mA maximum VDDA/VDDB quiescent current, 1.4mA typical
    • 4.6mA maximum VCC operating current, 2.7mA typical
    • 5mA maximum VDDA and VDDB operating current, 3mA typical
  • Output
    • 10Ω maximum pullup resistance, 4Ω typical
    • 1.1Ω maximum pulldown resistance, 0.55Ω typical
    • 2V maximum output active pulldown on OUTX, 1.6V typical
  • Switching
    • 16ns maximum output rise time, 5ns typical
    • 12ns maximum output fall time, 6ns typical
    • 60ns maximum propagation delay, 40ns typical
    • 70ns maximum DIS response delay, 45ns typical
    • 30ns maximum input pulse width that passes to output, 10ns typical
    • 0ns to 7ns propagation delay matching range
    • 0ns to 7ns pulse-width distortion range
    • 150V/ns minimum common mode transient immunity
  • Safety-limiting values
    • 61mA safety output supply current
    • Safety output supply power
      • 50mW input side
      • 925mW driver A/B side
      • 1900mW total
    • +150°C safety temperature
  • Insulation
    • >8mm external clearance/creepage
    • 26µm distance through the insulation
    • >600V comparative tracking index
    • Material group I per IEC 60664-1
  • Package thermal information
    • 65.8°C/W junction-to-ambient thermal resistance
    • 28.1°C/W junction-to-case thermal resistance
    • 23.2°C/W junction-to-board thermal resistance
    • 7.35°C/W junction-to-top characterization parameter
    • 22°C/W junction-to-board characterization parameter
    • 31.3°C/W junction-to-case (bottom) thermal resistance

Typical Applications Circuit

Application Circuit Diagram - Diodes Incorporated API21552Q Isolated Dual-Channel Gate Drivers

Functional Block Diagram

Block Diagram - Diodes Incorporated API21552Q Isolated Dual-Channel Gate Drivers
Published: 2026-09-03 | Updated: 2026-09-14