IXYS 60V TrenchT3 HiPerFET Power MOSFETs

IXYS 60V TrenchT3™ HiPerFET™ Power MOSFETs are ultra-low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1mΩ and withstand a junction temperature up to +175°C. The series is also avalanche rated at high avalanche current levels. Due to the high-current carrying capability of the TrenchT3 HiPerFET Power MOSFETs, paralleling multiple devices may not be necessary. This simplifies the power system and improves its reliability at the same time. The fast intrinsic body diode of TrenchT3 HiPerFET MOSFETs helps achieve high efficiency, especially during high-speed switching. IXYS 60V TrenchT3 HiPerFET Power MOSFETs are available in TO-220, TO-263, and TO-247 international standard size packages for design flexibility.

Features

  • Ultra low on-resistance R DS(on)
  • High current handling capability
  • Avalanche rated
  • Fast body diode
  • +175°C operating temperature
  • International standard packages
    • TO-220
    • TO-263
    • TO-247

Applications

  • Off-line uninterruptible power supplies (UPS)
  • DC-DC converters
  • Brushed/brushless DC motor drives
  • High-current switching power supplies
  • Primary side switches
  • Electric forklifts
  • Light electric vehicles (LEV)
  • Cordless home appliances and power tools
  • Unmanned aerial vehicles (UAV)
Published: 2017-02-16 | Updated: 2024-07-02