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Diodes Incorporated BC53-16PAWQ 80V PNP Medium Power Transistor

Diodes Inc. BC53-16PAWQ 80V PNP Medium Power Transistor is available in a compact DFN2020-3 package whose footprint is 50% smaller than an SOT-23 package. This device has a -80V collector-emitter voltage (VCEO) and -1A continuous collector current (IC) rating. The Diodes Inc. BC53-16PAWQ has a low saturation voltage (VCE(sat)) of less than 500mV at 0.5A and comes in a low-profile (0.62mm height) package for thin applications.

Features

  • >-80V breakdown voltage, collector-emitter, base open (BVCEO)
  • High -1A continuous collector current (IC)
  • -2A peak pulse collector current (ICM)
  • Low <-500mV saturation voltage (VCE(sat)) at -0.5A
  • 0.5W power dissipation (PD)
  • 100A (minimum) transistor current gain (hFE)
  • Low-profile, 0.62mm (typ.) high package for thin applications
  • Sidewall tin plating for wettable flanks in AOI
  • 4mm2 footprint is 50% smaller than SOT-23
  • Complementary NPN type is BC56-16PAWQ
  • Lead-free and RoHS-compliant
  • Halogen and antimony-free Green device
  • Suitable for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, and manufactured in an IATF16949 certified facility

Specifications

  • W-DFN2020-3 package
  • 0.6mm nominal package height
  • Molded plastic package material
  • Green molding compound
  • UL 94V-0 flammability rating
  • Moisture Sensitivity Level (MSL) 1 per J-STD-020
  • +260°C maximum soldering temperature for 30s per JEDEC J-STD-020
  • Matte tin finish terminals, solderable per MIL-STD-202, Method 208
  • 0.01 grams (approx.) weight

Package Outline

Chart - Diodes Incorporated BC53-16PAWQ 80V PNP Medium Power Transistor
Published: 2025-09-22 | Updated: 2025-10-07