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Infineon Technologies CY7C1021D CMOS Static RAM

Infineon Technologies CY7C1021D CMOS Static RAM is a high-performance device organized as 65,536 words by 16 bits. The CY7C1021D CMOS static RAM has an automatic power down feature that significantly reduces power consumption when deselected. This Infineon device has low active power of 80mA at 10ns and low CMOS standby power of 3mA.The CY7C1021D static RAM also features 2.0V data retention and independent control of upper and lower bits.

Features

  • -40°C to 85°C industrial temperature ranges
  • -40°C to 85°C automotive-A temperature ranges 
  • Pin-and function-compatible with CY7C1021CV33
  • High speed tAA = 10ns
  • ICC = 60mA @ 10ns low active power
  • ISB2 = 3mA low CMOS standby power
  • 2.0V data retention
  • Automatic power-down when deselected
  • CMOS for optimum speed/power
  • Independent control of upper and lower bits
  • Available in Pb-free 44-pin 400-Mil wide molded SOJ, 44-pin TSOP II, and 48-ball VFBGA packages

Block Diagram

Block Diagram - Infineon Technologies CY7C1021D CMOS Static RAM
Published: 2009-11-23 | Updated: 2024-06-25