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Infineon Technologies OptiMOS™ 8 Power MOSFETs

Infineon Technologies OptiMOS™ 8 Power MOSFETs are N-channel, normal level 80V (ISC016N08NM8 and ISC016N08NM8SC) or 100V (ISC019N10NM8SC) MOSFETs with very low on-resistance [RDS(ON)]. The ISC016N08NM8SC and ISC019N10NM8SC are available in dual-sided cooled packages (WSON-8) while the ISC016N08NM8 comes in a standard TDSON-8 package. Each package offers superior thermal resistance and is 100% avalanche tested. Infineon Technologies OptiMOS™ 8 Power MOSFETs feature a soft-recovery diode and are lead-free, halogen-free, and RoHS-compliant.

Features

  • N-channel, normal level
  • Optimized for motor drives, synchronous rectification, and battery protection (ISC016N08NM8 and ISC016N08NM8SC)
  • Optimized for high-performance SMPS and motor drives (ISC019N10NM8SC)
  • Dual-side cooled package with the lowest junction-top thermal resistance (ISC016N08NM8SC and ISC019N10NM8SC)
  • Soft recovery body diode
  • 100% avalanche tested
  • Superior thermal resistance
  • Very low RDS(ON)
  • +175°C rated
  • Pb-free lead plating, RoHS-compliant
  • Halogen-free according to IEC61249-2-21
  • MSL 1 classified according to J-STD-020 (ISC016N08NM8 and ISC016N08NM8SC)

Applications

  • Data center and AI data center solutions
  • Telecommunication infrastructures
  • Photovoltaic
  • Industrial and consumer BMS
  • Server power supply units (PSU)
  • Multicopters and drones
  • Power tools
  • Humanoid robots
  • Motor control

Specifications

  • Drain-source breakdown voltage [V(BR)DSS] (VGS = 0V, ID = 1mA)
    • ISC016N08NM8, ISC016N08NM8SC: 80V (min.)
    • ISC019N10NM8SC: 100V (min.)
  • Drain-source RDS(on) (VGS = 10V, ID = 50A)
    • ISC016N08NM8, ISC016N08NM8SC: 1.64mΩ (max.)
    • ISC019N10NM8SC: 1.95mΩ (max.)
  • Continuous drain current (ID) (VGS = 10V, TC = 25°C)
    • ISC016N08NM8: 268A (max.)
    • ISC016N08NM8SC: 269A (max.)
    • ISC019N10NM8SC: 245A (max.)
  • Output charge (Qoss)
    • ISC016N08NM8, ISC016N08NM8SC: 147nC (typ.) (VDS = 40V, VGS = 0V)
    • ISC019N10NM8SC: 205nC (typ.) (VDS = 50V, VGS = 0V)
  • Gate charge total (GQ)
    • ISC016N08NM8, ISC016N08NM8SC: 76nC (typ.) (VDD = 40V, ID = 50A, VGS = 0V to 10V)
    • ISC019N10NM8SC: 106nC (VDD = 50V, ID = 25A, VGS = 0V to 10V)
  • Reverse recovery charge (Qrr)
    • ISC016N08NM8, ISC016N08NM8SC: 162nC (typ.) (VR = 40V, IF = 50A, diF/dt = 100A/μs)
    • ISC019N10NM8SC: 53nC (typ.) (VR = 50V, IF = 25A, diF/dt = 100A/μs)

Packages & Circuit Diagrams

Chart - Infineon Technologies OptiMOS™ 8 Power MOSFETs
Published: 2026-03-04 | Updated: 2026-03-17