onsemi NCD57090 & NCV57090 IGBT/MOSFET Gate Drivers

onsemi NCD57090 and NCV57090 IGBT/MOSFET Gate Drivers are high-current, single-channel gate drivers for IGBTs and MOSFETs, with 5kVrms internal galvanic isolation. The NCD57090 and NCV57090 provide high system efficiency and reliability in high-power applications. These devices accept complimentary inputs and, depending on the pin configuration, offer options such as Active Miller Clamp, negative power supply, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. The NCD57090 and NCV57090 accommodate a wide range of input bias voltage and signal levels from 3.3V to 20.0V.

The onsemi NCD57090 and NCV57090 IGBT/MOSFET Gate Drivers are offered in a compact SOIC-8 package. The NCV57090 is AEC-Q100 Qualified and PPAP capable for automotive applications.

Features

AEC-Q100 qualified and PPAP capable (NCV57090 only)
High +6.5A/-6.5A peak output current
Low clamp voltage drop eliminates the need of a negative power supply to prevent spurious gate turn-on (Versions A, D, F)
Short propagation delays with accurate matching
IGBT/MOSFET gate clamping during short circuit
IGBT/MOSFET gate active pull-down
Tight UVLO thresholds for bias flexibility
Wide bias voltage range including negative VEE2 (Version B)