onsemi NDSH20120CDN Silicon Carbide (SiC) Schottky Diode
onsemi NDSH20120CDN Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The TO-247-3LD packaged NDSH20120CDN features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.
Features
- +175°C maximum junction temperature
- 49mJ Avalanche-rated, single-pulse
- High surge current capacity
- Positive temperature coefficient
- Ease of paralleling
- No reverse/forward recovery
- TO-247-3LD case
- Halide-free and RoHS-compliant with exemption 7a, lead-free 2LI (on second level interconnection)
Applications
- General purpose
- Switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS)
- Power switching circuits
Specifications
- 1200V maximum peak repetitive reverse voltage
- Maximum continuous rectified forward current range
- 20A to 24A per device
- 10A to 12A per leg
- Maximum forward surge current
- 459A to 564A non-repetitive peak range
- 59A non-repetitive
- 31A repetitive
- Maximum power dissipation
- 94W at +25°C
- 16W at +150°C
- 1.39V to 1.94V typical forward voltage range
- 200µA maximum reverse current
- 46nC typical total capacitive charge
- 32pF (at 800V) to 680pF (at 1V) typical total capacitance range
- Maximum thermal resistance
- 0.65°C/W junction-to-case per device
- 1.6°C/W junction-to-case per leg
- 40°C/W junction-to-ambient
- -55°C to +175°C operating temperature range
Related Solutions
onsemi EliteSiC
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
Published: 2024-02-09
| Updated: 2024-06-19