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onsemi NTMFS7D5N15MC Shielded Gate PowerTrench® MOSFET

onsemi NTMFS7D5N15MC N-Channel Shielded Gate PowerTrench® MOSFET is produced using an advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with a best-in-class soft-body diode. The onsemi NTMFS7D5N15MC lowers switching noise, EMI, capacitance (to minimize driver losses), and RDS(on) (to minimize conduction losses).

Features

  • Shielded gate MOSFET technology
  • Small footprint (5mm x 6mm) for compact designs
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • Lowers switching noise/EMI
  • Moisture Sensitivity Level (MSL) 1
  • 100% UIL tested
  • Lead-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

  • Synchronous rectification
  • AC-DC and DC-DC power supplies
  • AC-DC adapters (USB PD) SR
  • Load switches

Specifications

  • 150V maximum drain-to-source voltage
  • ±20V maximum gate-to-source voltage
  • 478A maximum pulsed drain current
  • 6ns typical rise time
  • 5ns typical fall time
  • 27ns typical turn-on delay time
  • 32ns turn-off delay time
  • 486mJ maximum single pulse drain-to-source avalanche energy
  • -55°C to +175°C operating junction temperature range
  • Power 56 (PQFN8) package
Published: 2024-11-06 | Updated: 2024-11-18