Qorvo QPD1035 GaN RF Power Transistors
Qorvo QPD1035 GaN RF Power Transistors are 40W discrete GaN on SiC HEMTs operating from DC to 6GHz with a 50V supply. The Qorvo QPD1035 transistors feature an input pre-match, making it ideal for broadband amplifiers in pulsed and CW operations. The devices are lead-free and RoHS-compliant.
Features
- DC to 6GHz operating frequency range
- 50V operating voltage
- Output power (P3dB) = 50W
- Drain Efficiency (P3dB) = 52.2%
- Linear Gain = 15.1dB
- Low thermal resistance package
Applications
- Military radar
- Civilian radar
- Professional and military radio communications
- Test instrumentation
- Wideband or narrowband amplifiers
- Jammers
Block Diagram
Evaluation Boards
Published: 2024-09-09
| Updated: 2024-09-12