ROHM Semiconductor RH7L03 60V N-Channel Power MOSFET
ROHM Semiconductor RH7L03 60V N-Channel Power MOSFET is a 60V drain-source voltage (VDSS) and ±35A continuous drain current (ID) rated automotive grade MOSFET that is AEC-Q101 qualified. This MOSFET has a drain-source on-state resistance [RDS(ON)] of 26.4mΩ (max.) at VGS = 10V, ID = 20A, and comes in a 3.3mm x 3.3mm DFN-8 (DFN3333T8LSAB) package. The ROHM Semiconductor RH7L03 MOSFET is ideal for Advanced Driver Assistance Systems (ADAS), information, lighting, and body applications.
Features
- Wettable flanks product
- AEC-Q101 qualified
- 100% avalanche tested
Applications
- ADAS
- Information
- Lighting
- Body
Specifications
- ±20V maximum gate-source voltage (VGSS)
- Drain-source on-state resistance [RDS(ON)]
- 26.4mΩ (max.) (VGS = 10V, ID = 20A)
- 42mΩ (max.) (VGS = 4.5V, ID = 10A)
- 33W power dissipation (PD)
- Total gate charge (Qg)
- 6.8nC (typ.) (VDD = 30V, ID = 10A, VGS = 10V)
- 3.7nC (typ.) (VDD = 30V, ID = 10A, VGS = 4.5V)
- +175°C junction temperature (Tj)
Circuit Diagram
Package Diagram
Published: 2025-07-24
| Updated: 2025-08-19