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ROHM Semiconductor RH7L04 60V N-Channel Power MOSFETs

ROHM Semiconductor RH7L04 60V N-Channel Power MOSFETs are AEC-Q101 qualified, 60V drain-source voltage (VDSS) and ±40A continuous drain current (ID) rated automotive-grade MOSFETs. These MOSFETs feature a low drain-source on-state resistance [RDS(ON)] and are available in a 3.3mm x 3.3mm DFN-8 (DFN3333T8LSAB) package. The ROHM Semiconductor RH7L04 MOSFETs are ideal forAdvanced Driver Assistance Systems (ADAS), information, lighting, and body applications.

Features

  • Wettable flanks product
  • AEC-Q101 qualified
  • 100% avalanche tested

Applications

  • ADAS
  • Information
  • Lighting
  • Body

Specifications

  • Drain-source on-state resistance [RDS(ON)]
    • RH7L04BBKFRA
      • 6.4mΩ (max.) (VGS = 10V, ID = 20A)
      • 9.9mΩ (max.) (VGS = 4.5V, ID = 10A)
    • RH7L04CBKFRA
      • 10.6mΩ (max.) (VGS = 10V, ID = 20A)
      • 16.0mΩ (max.) (VGS = 4.5V, ID = 10A)
    • RH7L04CBLFRA
      • 10.6mΩ (max.) (VGS = 10V, ID = 20A)
      • 14.8mΩ (max.) (VGS = 4.5V, ID = 10A)
  • Power dissipation (PD)
    • RH7L04BBKFRA - 75W
    • RH7L04CBKFRA - 62W
    • RH7L04CBLFRA - 64W
  • Total gate charge (Qg)
    • RH7L04BBKFRA
      • 21nC (typ.) (VDD = 30V, ID = 10A, VGS = 10V)
      • 105nC (typ.) (VDD = 30V, ID = 10A, VGS = 4.5V)
    • RH7L04CBKFRA
      • 13.6nC (typ.) (VDD = 30V, ID = 10A, VGS = 10V)
      • 6.6nC (typ.) (VDD = 30V, ID = 10A, VGS = 4.5V)
    • RH7L04CBLFRA
      • 13.6nC (typ.) (VDD = 30V, ID = 10A, VGS = 10V)
      • 6.6nC (typ.) (VDD = 30V, ID = 10A, VGS = 6.0V)
  • +175°C junction temperature (Tj)

Circuit Diagram

Schematic - ROHM Semiconductor RH7L04 60V N-Channel Power MOSFETs

Package Diagram

Mechanical Drawing - ROHM Semiconductor RH7L04 60V N-Channel Power MOSFETs
Published: 2025-07-24 | Updated: 2025-08-19