ROHM Semiconductor RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs
ROHM Semiconductor RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs enable high current handling capability with reduced package resistance. The HSOP-8 and HSMT-8 packaged components provide simultaneous low ON-resistance and gate charge capacitance, minimizing energy loss. Operating within a -55°C to +150°C temperature range, these MOSFETs are ideal for drive applications that operate on 24V/36V/48V power supplies.
Features
- Utilizes a Cu clip package that enables high current handling capability with reduced package resistance
- Simultaneous low ON-resistance and gate charge capacitance (trade-off relationship) minimizes energy loss
- Offered in the compact 3333 and 5060 package sizes (HSOP-8 and HSMT-8 case styles)
- 40V/60V/80V/100V/150V breakdown voltages (24V/36V/48V input with spikes and noise margins considered)
- Ideal for drive applications that operate on 24V/36V/48V power supplies
Applications
- Power supplies
- Servers
- Base stations
- Motor-driven equipment
- Industrial
- Consumer
Specifications
- 40V to 150V Drain-source breakdown range
- 25A to 210A Continuous drain current range
- 1.34mΩ to 73mΩ Drain-source resistance range
- ±20V Gate-source range
- 2.5V or 4V Gate-source threshold range
- 16.7nC to 67nC Gate charge range
- -55°C to +150°C Operating temperature range
- 59W to 104W Power dissipation range
Videos
Structure Comparison
Featured Components
ROHM Semiconductor RS6N120BH N-Channel Power MOSFET
Compact low-loss MOSFET featuring a Cu clip structure contributing to high-efficiency operation.
ROHM Semiconductor RH6 N-Channel Power MOSFETs
Offer low on-resistance in a small, high-power, 8-pin, surface mount molded package (HSMT-8).
Published: 2023-05-19
| Updated: 2025-10-10