STMicroelectronics STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Features
- 6μs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 10A,
- 30A (STGP30M65DF2, STGB30M65DF2, STGWA30M65DF2)
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery anti-parallel diode
Applications
- Motor control
- UPS
- PFC
Related Product
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Development Tools
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View Results ( 17 ) Page
| Part Number | Description | Datasheet |
|---|---|---|
| STGYA120M65DF2 | IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss |  |
| STGD6M65DF2 | IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss | |
| STGP30M65DF2 | IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss | |
| STGP6M65DF2 | IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss | |
| STGB15M65DF2 | IGBTs Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package | |
| STGD4M65DF2 | IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss | |
| STGWA50M65DF2AG | IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT | |
| STGB30M65DF2 | IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss | |
| STGW75M65DF2 | IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss | |
| STGWA50M65DF2 | IGBTs Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads | |
Published: 2015-07-02
| Updated: 2026-01-12