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Taiwan Semiconductor TSM2N7002 N-Channel Power MOSFETs

Taiwan Semiconductor TSM2N7002 N-Channel Power MOSFETs feature a low drain-source on-state resistance (RDS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. These power MOSFETs are available in single and dual configuration variants. The TSM2N7002 power MOSFETs operate at 60V drain-source breakdown voltage and -55°C to +150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.

Features

  • Low RDS(ON) to minimize conductive losses
  • Logic level
  • Low gate charge for fast power switching
  • 60V drain-source breakdown voltage
  • ESD protected 2KV to 2.5KV (HBM) range
  • -55°C to +150°C operating temperature range
  • RoHS compliant
  • Halogen-free according to IEC 61249-2-21

Applications

  • Low side Load switching
  • Level shift circuits
  • General switch circuits
Published: 2021-03-08 | Updated: 2024-01-22