2SA2007E

755-2SA2007E
2SA2007E

Mfr.:

Description:
Bipolar Transistors - BJT Trans GP BJT PNP 60V 12A

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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Availability

Stock:
Not Available

Pricing (IDR)

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Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
Through Hole
TO-220FP-3
PNP
Single
12 A
60 V
100 V
5 V
300 mV
2 W
80 MHz
+ 150 C
2SA2007
Bulk
Brand: ROHM Semiconductor
Continuous Collector Current: - 12 A
DC Collector/Base Gain hFE Min: 160
DC Current Gain hFE Max: 320
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 500
Subcategory: Transistors
Unit Weight: 2 g
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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