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STPSC20G12WL

Name: STMicroelectronics STPSC20G12WL
Brand: STMicroelectronics
SKU: 511-STPSC20G12WL
Price: 198687 IDR
Availability: InStock

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Mouser No:

511-STPSC20G12WL

Mfr. No:

STPSC20G12WL

Mfr.:

STMicroelectronics

Description:

SiC Schottky Diodes 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode

Complete Your Design

Datasheet:

STPSC20G12WL Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STPSC20G12WL

In Stock: 878

Stock:: 878 Can Dispatch Immediately

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Factory Lead Time:: 25 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp198.687	Rp198.687
	Rp110.443	Rp1.104.430
	Rp108.058	Rp10.805.800
	Rp104.205	Rp62.523.000
	Rp101.453	Rp121.743.600
25.200	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	DO-247-2
Configuration:	Single
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.35 V
Ifsm - Forward Surge Current:	180 A
Ir - Reverse Current:	10 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	600
Subcategory:	Diodes & Rectifiers
Unit Weight:	6 g

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Datasheet

STPSC20G12WL Datasheet (PDF)

PCN

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CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC20G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC20G12 Silicon Carbide Power Schottky Diodes are available in a DO-247 package with long leads. The STMicroelectronics STPSC20G12 is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.