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STPSC406D

Name: STMicroelectronics STPSC406D
Brand: STMicroelectronics
SKU: 511-STPSC406D
Price: 17447 IDR
Availability: OutOfStock

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Mouser No:

511-STPSC406D

Mfr. No:

STPSC406D

Mfr.:

STMicroelectronics

Description:

SiC Schottky Diodes 600 V Power Schottky Diode

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Lifecycle:

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Datasheet:

STPSC406D Datasheet (PDF)

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp17.447	Rp17.447.000
	Rp16.988	Rp33.976.000
	Rp16.713	Rp83.565.000
25.000	Quote

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Mfr.:

STMicroelectronics

Mfr. No:

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Description:

SiC Schottky Diodes 650V pwr Schottky 4A 650V VRRM

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220AC-2
Configuration:	Single
If - Forward Current:	4 A
Vrrm - Repetitive Reverse Voltage:	600 V
Vf - Forward Voltage:	1.9 V
Ifsm - Forward Surge Current:	14 A
Ir - Reverse Current:	50 uA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	STPSC
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	1000
Subcategory:	Diodes & Rectifiers
Unit Weight:	6 g

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Datasheet

STPSC406D Datasheet (PDF)

PCN

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 8541100901
KRHTS:: 8541109000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

600V Power Schottky Silicon Carbide Diode

STMicroelectronics' 600V Power Schottky Silicon Carbide Diodes are ultra high performance power Schottky diodes. They are manufactured using a silicon carbide substrate. The wide band gap material of these allows the design of a Schottky diode structured with a 600V rating. Due to the Schottky construction of these diodes no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These Power Schottky Silicon Carbide Diodes will boost the performance of PFC operations in hard switching conditions.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.