CSD13383F4

Texas Instruments
595-CSD13383F4
CSD13383F4

Mfr.:

Description:
MOSFETs CSD13383F4 12-V Ncha MOSFET 3-PICOSTAR A A 595-CSD13383F4T

Datasheet:
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Learn more about Texas Instruments CSD13383F4

In Stock: 24.242

Stock:
24.242 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp9.540 Rp9.540
Rp5.907 Rp59.070
Rp3.761 Rp376.100
Rp2.825 Rp1.412.500
Rp2.458 Rp2.458.000
Full Reel (Order in multiples of 3000)
Rp2.110 Rp6.330.000
Rp1.871 Rp11.226.000
Rp1.633 Rp14.697.000
Rp1.339 Rp32.136.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
CSD13383F4T
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
Rp26.051
Min:
1

Similar Product

Texas Instruments CSD13383F4T
Texas Instruments
MOSFETs 12V N-Channel FemtoF ET MOSFET A 595-CSD A 595-CSD13383F4
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
N-Channel
1 Channel
12 V
2.9 A
44 mOhms
- 10 V, 10 V
700 mV
2.6 nC
- 55 C
+ 150 C
500 mW
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Product Type: MOSFETs
Series: CSD13383F4
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 0,400 mg
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Attributes selected: 0

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Compliance Codes
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Philippines
Country of Diffusion:
China
The country is subject to change at the time of shipment.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.

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