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CSD16408Q5

Name: Texas Instruments CSD16408Q5
Brand: Texas Instruments
SKU: 595-CSD16408Q5
Price: 30454 IDR
Availability: OutOfStock

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Mouser No:

595-CSD16408Q5

Mfr. No:

CSD16408Q5

Mfr.:

Texas Instruments

Description:

MOSFETs N-Channel NexFET Pwr MOSFET

Datasheet:

CSD16408Q5 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD16408Q5

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 6 Weeks Estimated factory production time.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp30.454	Rp30.454
	Rp27.336	Rp273.360
	Rp23.116	Rp2.311.600
	Rp21.648	Rp10.824.000
	Rp18.071	Rp18.071.000
Full Reel (Order in multiples of 2500)
	Rp11.466	Rp28.665.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	5.4 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	6.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.1 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	10.8 ns
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	CSD16408Q5
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	11.3 ns
Unit Weight:	105,800 mg

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Power Management Guide 2018 (Rev. R)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

NexFET™ Power MOSFET: CSD16408Q5

The Texas Instruments CSD16408Q5 N-channel NexFET™ power MOSFET minimizes losses in power conversion applications and features ultralow gate charge total and gate charge gate to drain. The TI CSD16408Q5 NexFET MOSFET is avalanche rated and features low thermal resistance. The TI CSD16408Q5 power MOSFET is ideal for Point-of-Load synchronous buck in network, telecom, and computing systems. This NexFET device is also optimized for Control FET applications.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.