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CSD17304Q3

Name: Texas Instruments CSD17304Q3
Brand: Texas Instruments
SKU: 595-CSD17304Q3
Price: 25501 IDR
Availability: InStock

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See Product Specifications

Mouser No:

595-CSD17304Q3

Mfr. No:

CSD17304Q3

Mfr.:

Texas Instruments

Description:

MOSFETs 30V N Channel NexFET Power MOSFET

Datasheet:

CSD17304Q3 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD17304Q3

In Stock: 186

Stock:: 186

Can Dispatch Immediately

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On Order:: 10.000

Expected 01/10/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp25.501	Rp25.501
	Rp15.943	Rp159.430
	Rp10.567	Rp1.056.700
	Rp8.311	Rp4.155.500
	Rp7.522	Rp7.522.000
Full Reel (Order in multiples of 2500)
	Rp6.733	Rp16.832.500
	Rp6.641	Rp33.205.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	7.5 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	5.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.7 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Development Kit:	TPS65090EVM
Fall Time:	3.1 ns
Forward Transconductance - Min:	48 S
Product Type:	MOSFETs
Rise Time:	9.1 ns
Series:	CSD17304Q3
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	10.4 ns
Typical Turn-On Delay Time:	5.1 ns
Unit Weight:	40,600 mg

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Datasheet

CSD17304Q3 Datasheet

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CSD17304Q3 Symbol & Footprint by SnapMagic

PCN

Product Catalogs

Power Management Guide 2018 (Rev. R)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8504405590
MXHTS:: 85423999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.