It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD19534KCS

Name: Texas Instruments CSD19534KCS
Brand: Texas Instruments
SKU: 595-CSD19534KCS
Price: 37059 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD19534KCS

Mfr. No:

CSD19534KCS

Mfr.:

Texas Instruments

Description:

MOSFETs 100V N-Channel NexFE T Pwr MOSFET

Datasheet:

CSD19534KCS Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD19534KCS

In Stock: 833

Stock:: 833 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp37.059	Rp37.059
	Rp18.016	Rp180.160
	Rp16.126	Rp1.612.600
	Rp12.806	Rp6.403.000
	Rp10.971	Rp10.971.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	16.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	16.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	118 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	1 ns
Product Type:	MOSFETs
Rise Time:	2 ns
Series:	CSD19534KCS
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	9 ns
Typical Turn-On Delay Time:	6 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

SPICE Models

Technical Resources

CSD19534KCS TINA-TI Reference Design

This functionality requires JavaScript to be enabled.

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854239099
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: China

The country is subject to change at the time of shipment.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.