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CSD25480F3T

Name: Texas Instruments CSD25480F3T
Brand: Texas Instruments
SKU: 595-CSD25480F3T
Price: 6605 IDR
Availability: InStock

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Mouser No:

595-CSD25480F3T

Mfr. No:

CSD25480F3T

Mfr.:

Texas Instruments

Description:

MOSFETs -20V P-channel Femto FET MOSFET A 595-CS A 595-CSD25480F3

Datasheet:

CSD25480F3T Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD25480F3T

In Stock: 8.000

Stock:: 8.000 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp6.605	Rp6.605
	Rp6.568	Rp65.680
Full Reel (Order in multiples of 250)
	Rp6.568	Rp1.642.000
	Rp6.550	Rp16.375.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD25480F3

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp6.605

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD25480F3

Description:

MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25480F3T

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	1.7 A
Rds On - Drain-Source Resistance:	840 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	950 mV
Qg - Gate Charge:	700 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Tradename:	PicoStar
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	8 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	CSD25480F3
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	0,300 mg

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Filter Document:

Datasheet

CSD25480F3T Datasheet

PCN

Product Change Notification (PDF)

SPICE Models

Technical Resources

CSD25480F3 TINA-TI Reference Design

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Compliance Codes

CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: China

The country is subject to change at the time of shipment.

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.