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CSD25483F4T

Name: Texas Instruments CSD25483F4T
Brand: Texas Instruments
SKU: 595-CSD25483F4T
Price: 16878 IDR
Availability: InStock

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Mouser No:

595-CSD25483F4T

Mfr. No:

CSD25483F4T

Mfr.:

Texas Instruments

Description:

MOSFETs 20V P-Ch FemtoFET MO SFET A 595-CSD25483 A 595-CSD25483F4

Datasheet:

CSD25483F4T Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD25483F4T

In Stock: 1.825

Stock:: 1.825 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp16.878	Rp16.878
	Rp9.540	Rp95.400
	Rp6.384	Rp638.400
Full Reel (Order in multiples of 250)
	Rp6.384	Rp1.596.000
	Rp5.669	Rp2.834.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD25483F4

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

Rp7.889

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD25483F4

Description:

MOSFETs 20V P-CH FemtoFET MO SFET A 595-CSD25483 A 595-CSD25483F4T

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	1.6 A
Rds On - Drain-Source Resistance:	1.07 Ohms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	950 mV
Qg - Gate Charge:	960 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	1.4 S
Product Type:	MOSFETs
Rise Time:	3.7 ns
Series:	CSD25483F4
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	17.4 ns
Typical Turn-On Delay Time:	4.3 ns
Unit Weight:	0,400 mg

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Datasheet

CSD25483F4T Datasheet

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Function Diagram

PCN

SPICE Models

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CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412101
ECCN:: EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.