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TK16V60W5,LVQ

Name: Toshiba TK16V60W5,LVQ
Brand: Toshiba
SKU: 757-TK16V60W5LVQ
Price: 82557 IDR
Availability: InStock

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Mouser No:

757-TK16V60W5LVQ

Mfr. No:

TK16V60W5,LVQ

Mfr.:

Toshiba

Description:

MOSFETs Pb-F POWER MOSFET TRANSISTOR DTMOS DFN 8?8-OS PD=139W F=1MHZ

Datasheet:

TK16V60W5,LVQ Datasheet (PDF)

ECAD Model:

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In Stock: 2.495

Stock:: 2.495 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2495 will be subject to minimum order requirements.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp82.557	Rp82.557
	Rp63.844	Rp638.440
	Rp45.682	Rp4.568.200
	Rp43.663	Rp21.831.500
	Rp39.627	Rp39.627.000
Full Reel (Order in multiples of 2500)
	Rp35.591	Rp88.977.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN8x8-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	15.8 A
Rds On - Drain-Source Resistance:	245 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	139 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	40 ns
Series:	TK16G60W
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	75 ns
Unit Weight:	175 mg

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Datasheet

TK16V60W5,LVQ Datasheet (PDF)

Application Notes

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Test/Quality Data

Reliability Tests Report

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

TK16x60W Si N-Channel MOSFETs (DTMOSIV)

Toshiba TK16x60W Si N-Channel MOSFETs (DTMOSIV) exhibit the chip design of DTMOSIV generation and come in different variants. The Si N-channel MOSFETs feature low drain-source on-resistance and fast reverse recovery time. These MOSFETs can easily control gate switching. The TK16x60W MOSFETs are available in different dimensions and come in other packages, including DFN8x8, TO-247, TO-3P(N), D2PAK, TO-220, and TO-220SIS. These Toshiba TK16x60W Si N-Channel MOSFETs are used in switching voltage regulators.

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.