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TK39N60W5,S1VF

Name: Toshiba TK39N60W5,S1VF
Brand: Toshiba
SKU: 757-TK39N60W5S1VF
Price: 133559 IDR
Availability: InStock

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Mouser No:

757-TK39N60W5S1VF

Mfr. No:

TK39N60W5,S1VF

Mfr.:

Toshiba

Description:

MOSFETs Power MOSFET N-Channel

Datasheet:

TK39N60W5,S1VF Datasheet (PDF)

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Learn more about Toshiba TK39N60W5,S1VF

In Stock: 4.415

Stock:: 4.415 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp133.559	Rp133.559
	Rp81.273	Rp812.730
	Rp74.852	Rp8.982.240
	Rp65.312	Rp33.309.120
	Rp62.560	Rp157.651.200

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	38.8 A
Rds On - Drain-Source Resistance:	62 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	270 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	9 ns
Product Type:	MOSFETs
Rise Time:	120 ns
Series:	TK39N60W5
Factory Pack Quantity:	30
Subcategory:	Transistors
Typical Turn-Off Delay Time:	200 ns
Typical Turn-On Delay Time:	180 ns
Unit Weight:	6 g

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Datasheet

TK39N60W5,S1VF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.