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SGT105R70ILB

Name: STMicroelectronics SGT105R70ILB
Brand: STMicroelectronics
SKU: 511-SGT105R70ILB
Price: 42012 IDR
Availability: OutOfStock

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Mouser No:

511-SGT105R70ILB

Mfr. No:

SGT105R70ILB

Mfr.:

STMicroelectronics

Description:

GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SGT105R70ILB Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 52 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 3000 Multiples: 3000

Unit Price:

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Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	Rp42.012	Rp126.036.000
9.000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	GaN FETs
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-8
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	21.7 A
Rds On - Drain-Source Resistance:	105 mOhms
Vgs - Gate-Source Voltage:	- 6 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	4.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	158 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Packaging:	Reel
Product:	FET
Product Type:	GaN FETs
Rise Time:	9 ns
Series:	SGT
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Type:	PowerGaN Transistor

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Datasheet

SGT105R70ILB Datasheet (PDF)

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Product Change Notification 2025-11-26 (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.