PrimePACK™3+ B-Series Modules

Infineon Technologies PrimePACK™3+ B-Series Modules are designed with Trench/Fieldstop IGBT5 and emitter-controlled 5 diodes. These modules feature extended operating temperature, high short-circuit capability, and unbeatable robustness. The PrimePACK™3+ modules offer high creepage and clearance distances, high power and thermal cycling capability, and high power density. These modules are ideal for high-power converters, motor drives, solar equipment, UPS systems, traction drives, and wind turbines.

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Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Pd - Power Dissipation Package/Case Minimum Operating Temperature Maximum Operating Temperature Packaging
Infineon Technologies IGBT Modules 1700 V, 1800 A dual IGBT module 2In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.7 kV 2.1 V 1.8 kA 400 nA Module - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 6In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.7 V 1.5 kA 400 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 1500 A dual IGBT module 8In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.7 V 1.5 kA 400 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1700 V, 1500 A dual IGBT module 5In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.7 kV 1.75 V 1.5 kA 400 nA 1.5 MW - 40 C + 175 C Tray
Infineon Technologies FF1500R17IP5PBPSA1
Infineon Technologies IGBT Modules 1700 V, 1500 A dual IGBT module 2In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.7 kV 1.75 V 1.5 kA 400 nA 1.5 MW - 40 C + 175 C Tray
Infineon Technologies IGBT Modules PP IHM I Lead-Time 13 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules 1.2 kV 1.7 V 1.8 kA 400 nA 250 mm x 89 mm - 40 C + 175 C Tray