|
|
MOSFETs High Voltage Power MOSFET
- IXTJ4N150
- IXYS
-
1:
Rp293.353
-
248In Stock
|
Mouser Part No
747-IXTJ4N150
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
248In Stock
|
|
|
Rp293.353
|
|
|
Rp166.215
|
|
|
Rp165.297
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
2.5 A
|
6 Ohms
|
- 30 V, 30 V
|
5 V
|
44.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 3 Amps 1200V 4.500 Rds
- IXTH3N120
- IXYS
-
1:
Rp109.342
-
211In Stock
-
90Expected 15/12/2026
|
Mouser Part No
747-IXTH3N120
|
IXYS
|
MOSFETs 3 Amps 1200V 4.500 Rds
|
|
211In Stock
90Expected 15/12/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
3 A
|
4.5 Ohms
|
- 20 V, 20 V
|
4.5 V
|
39 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs High Voltage Power MOSFET
- IXTH4N150
- IXYS
-
1:
Rp232.444
-
215In Stock
|
Mouser Part No
747-IXTH4N150
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
215In Stock
|
|
|
Rp232.444
|
|
|
Rp173.186
|
|
|
Rp131.357
|
|
|
Rp122.551
|
|
|
Rp121.817
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
4 A
|
6 Ohms
|
- 30 V, 30 V
|
2.5 V
|
44.5 nC
|
- 55 C
|
+ 150 C
|
280 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 0.75 Amps 1000V 15 Rds
- IXTP05N100
- IXYS
-
1:
Rp85.492
-
549In Stock
|
Mouser Part No
747-IXTP05N100
|
IXYS
|
MOSFETs 0.75 Amps 1000V 15 Rds
|
|
549In Stock
|
|
|
Rp85.492
|
|
|
Rp44.030
|
|
|
Rp38.343
|
|
|
Rp32.656
|
|
|
Rp32.472
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1 kV
|
750 mA
|
17 Ohms
|
- 30 V, 30 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 6 Amps 1200V 2.700 Rds
- IXTT6N120
- IXYS
-
1:
Rp318.120
-
274In Stock
|
Mouser Part No
747-IXTT6N120
|
IXYS
|
MOSFETs 6 Amps 1200V 2.700 Rds
|
|
274In Stock
|
|
|
Rp318.120
|
|
|
Rp196.302
|
|
|
Rp183.643
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D3PAK-3 (TO-268-3)
|
N-Channel
|
1 Channel
|
1.2 kV
|
6 A
|
2.6 Ohms
|
- 20 V, 20 V
|
5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 0.5 Amps 1000V
- IXTP05N100M
- IXYS
-
1:
Rp110.259
-
300In Stock
|
Mouser Part No
747-IXTP05N100M
|
IXYS
|
MOSFETs 0.5 Amps 1000V
|
|
300In Stock
|
|
|
Rp110.259
|
|
|
Rp57.973
|
|
|
Rp50.818
|
|
|
Rp45.682
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1 kV
|
700 mA
|
15 Ohms
|
- 30 V, 30 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs TO268 1.5KV 12A N-CH HIVOLT
- IXTT12N150HV
- IXYS
-
1:
Rp1.293.943
-
263In Stock
|
Mouser Part No
747-IXTT12N150HV
|
IXYS
|
MOSFETs TO268 1.5KV 12A N-CH HIVOLT
|
|
263In Stock
|
|
|
Rp1.293.943
|
|
|
Rp1.021.138
|
|
|
Rp992.519
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D3PAK-3 (TO-268-3)
|
N-Channel
|
1 Channel
|
1.5 kV
|
12 A
|
2.2 Ohms
|
- 30 V, 30 V
|
2.5 V
|
106 nC
|
- 55 C
|
+ 150 C
|
890 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 1
- IXFH16N120P
- IXYS
-
1:
Rp456.632
-
158In Stock
|
Mouser Part No
747-IXFH16N120P
|
IXYS
|
MOSFETs 1
|
|
158In Stock
|
|
|
Rp456.632
|
|
|
Rp295.187
|
|
|
Rp295.004
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
16 A
|
950 mOhms
|
- 30 V, 30 V
|
3.5 V
|
120 nC
|
- 55 C
|
+ 150 C
|
660 W
|
Enhancement
|
HiPerFET
|
Tube
|
|
|
|
MOSFETs High Voltage Power MOSFET
- IXTA05N100HV
- IXYS
-
1:
Rp54.671
-
2.298In Stock
|
Mouser Part No
747-IXTA05N100HV
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
2.298In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1 kV
|
750 mA
|
17 Ohms
|
- 30 V, 30 V
|
2.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs TO263 1.5KV 3A N-CH HIVOLT
- IXTA3N150HV
- IXYS
-
1:
Rp260.330
-
223In Stock
-
300Expected 14/12/2026
|
Mouser Part No
747-IXTA3N150HV
|
IXYS
|
MOSFETs TO263 1.5KV 3A N-CH HIVOLT
|
|
223In Stock
300Expected 14/12/2026
|
|
|
Rp260.330
|
|
|
Rp160.344
|
|
|
Rp154.840
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1.5 kV
|
3 A
|
7.3 Ohms
|
- 30 V, 30 V
|
2.5 V
|
38.6 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs MOSFET Id3 BVdass1200
- IXTP3N120
- IXYS
-
1:
Rp197.220
-
654In Stock
|
Mouser Part No
747-IXTP3N120
|
IXYS
|
MOSFETs MOSFET Id3 BVdass1200
|
|
654In Stock
|
|
|
Rp197.220
|
|
|
Rp122.001
|
|
|
Rp112.644
|
|
|
Rp102.187
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
3 A
|
4.5 Ohms
|
- 20 V, 20 V
|
2.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
200 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 1500V High Voltage Power MOSFET
- IXTT12N150
- IXYS
-
1:
Rp236.847
-
310In Stock
|
Mouser Part No
747-IXTT12N150
|
IXYS
|
MOSFETs 1500V High Voltage Power MOSFET
|
|
310In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D3PAK-3 (TO-268-3)
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
2 Ohms
|
- 30 V, 30 V
|
4.5 V
|
106 nC
|
- 55 C
|
+ 150 C
|
890 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 3 Amps 1200V 4.5 Rds
- IXTA3N120
- IXYS
-
1:
Rp188.230
-
62In Stock
-
3.100On Order
|
Mouser Part No
747-IXTA3N120
|
IXYS
|
MOSFETs 3 Amps 1200V 4.5 Rds
|
|
62In Stock
3.100On Order
Stock:
62 Can Dispatch Immediately
On Order:
1.200 Expected 28/10/2026
1.900 Expected 19/01/2027
Factory Lead Time:
23 Weeks
|
|
|
Rp188.230
|
|
|
Rp114.112
|
|
|
Rp105.123
|
|
|
Rp102.187
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1.2 kV
|
3 A
|
4.5 Ohms
|
- 20 V, 20 V
|
2.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs TO263 1.2KV 3A N-CH HIVOLT
- IXTA3N120HV
- IXYS
-
1:
Rp206.026
-
14In Stock
-
350Expected 16/11/2026
|
Mouser Part No
747-IXTA3N120HV
|
IXYS
|
MOSFETs TO263 1.2KV 3A N-CH HIVOLT
|
|
14In Stock
350Expected 16/11/2026
|
|
|
Rp206.026
|
|
|
Rp117.781
|
|
|
Rp108.608
|
|
|
Rp100.169
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1.2 kV
|
3 A
|
4.5 Ohms
|
- 20 V, 20 V
|
2.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
200 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs TO263 150V 4A N-CH HIVOLT
- IXTA4N150HV
- IXYS
-
1:
Rp297.389
-
83In Stock
|
Mouser Part No
747-IXTA4N150HV
|
IXYS
|
MOSFETs TO263 150V 4A N-CH HIVOLT
|
|
83In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1.5 kV
|
4 A
|
6 Ohms
|
- 30 V, 30 V
|
2.5 V
|
375 nC
|
- 55 C
|
+ 150 C
|
280 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs High Voltage Power MOSFET
- IXTH3N150
- IXYS
-
1:
Rp185.845
-
8In Stock
|
Mouser Part No
747-IXTH3N150
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
8In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
3 A
|
7.3 Ohms
|
- 30 V, 30 V
|
2.5 V
|
38.6 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 6 Amps 1200V 2.700 Rds
- IXTH6N120
- IXYS
-
1:
Rp183.643
-
111In Stock
|
Mouser Part No
747-IXTH6N120
|
IXYS
|
MOSFETs 6 Amps 1200V 2.700 Rds
|
|
111In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
6 A
|
2.4 Ohms
|
- 20 V, 20 V
|
2.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 0.1 Amps 1000V 80 Rds
- IXTY01N100
- IXYS
-
1:
Rp78.521
-
300In Stock
|
Mouser Part No
747-IXTY01N100
|
IXYS
|
MOSFETs 0.1 Amps 1000V 80 Rds
|
|
300In Stock
|
|
|
Rp78.521
|
|
|
Rp39.811
|
|
|
Rp35.958
|
|
|
Rp30.454
|
|
|
Rp29.721
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
1 kV
|
100 mA
|
80 Ohms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs >1200V High Voltage Power MOSFET
- IXTH12N150
- IXYS
-
1:
Rp398.292
-
285Expected 04/11/2026
|
Mouser Part No
747-IXTH12N150
|
IXYS
|
MOSFETs >1200V High Voltage Power MOSFET
|
|
285Expected 04/11/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
12 A
|
2 Ohms
|
- 30 V, 30 V
|
4.5 V
|
106 nC
|
- 55 C
|
+ 150 C
|
890 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 1500 V High Voltage Power MOSFET
- IXTX20N150
- IXYS
-
1:
Rp642.844
-
295Expected 31/08/2026
|
Mouser Part No
747-IXTX20N150
|
IXYS
|
MOSFETs 1500 V High Voltage Power MOSFET
|
|
295Expected 31/08/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
20 A
|
1 Ohms
|
- 30 V, 30 V
|
4.5 V
|
215 nC
|
- 55 C
|
+ 150 C
|
1.25 kW
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 0.75 Amps 1000V 15 Rds
- IXTA05N100
- IXYS
-
300:
Rp57.973
-
Non-Stocked Lead-Time 19 Weeks
|
Mouser Part No
747-IXTA05N100
|
IXYS
|
MOSFETs 0.75 Amps 1000V 15 Rds
|
|
Non-Stocked Lead-Time 19 Weeks
|
|
Min.: 300
Mult.: 50
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1 kV
|
750 mA
|
17 Ohms
|
- 30 V, 30 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH VOLT PWR MOSFET 1500V 6A
- IXTH6N150
- IXYS
-
1:
Rp308.580
-
Non-Stocked Lead-Time 32 Weeks
|
Mouser Part No
747-IXTH6N150
|
IXYS
|
MOSFETs HIGH VOLT PWR MOSFET 1500V 6A
|
|
Non-Stocked Lead-Time 32 Weeks
|
|
|
Rp308.580
|
|
|
Rp191.349
|
|
|
Rp163.279
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
500 V
|
6 A
|
3.5 Ohms
|
- 20 V, 20 V
|
5 V
|
67 nC
|
- 55 C
|
+ 150 C
|
540 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs High Voltage Power MOSFET
- IXTJ6N150
- IXYS
-
300:
Rp215.749
-
Non-Stocked Lead-Time 24 Weeks
|
Mouser Part No
747-IXTJ6N150
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
Non-Stocked Lead-Time 24 Weeks
|
|
|
Rp215.749
|
|
|
Rp211.713
|
|
Min.: 300
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
3 A
|
3.85 Ohms
|
- 30 V, 30 V
|
2.5 V
|
67 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 1200V High Voltage Power MOSFET
- IXTK20N150
- IXYS
-
1:
Rp1.204.965
-
Non-Stocked Lead-Time 24 Weeks
|
Mouser Part No
747-IXTK20N150
|
IXYS
|
MOSFETs 1200V High Voltage Power MOSFET
|
|
Non-Stocked Lead-Time 24 Weeks
|
|
|
Rp1.204.965
|
|
|
Rp1.046.823
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-264-3
|
N-Channel
|
|
1.5 kV
|
20 A
|
1 Ohms
|
|
|
|
|
|
|
|
|
Tube
|
|
|
|
MOSFETs 2 Amps 800V 6.2 Rds
- IXTP2N80
- IXYS
-
50:
Rp50.452
-
Non-Stocked
|
Mouser Part No
747-IXTP2N80
|
IXYS
|
MOSFETs 2 Amps 800V 6.2 Rds
|
|
Non-Stocked
|
|
|
Rp50.452
|
|
|
Rp37.426
|
|
|
Rp31.372
|
|
|
Rp29.170
|
|
|
Rp27.336
|
|
Min.: 50
Mult.: 50
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
2 A
|
6.2 Ohms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
54 W
|
Enhancement
|
|
Tube
|
|