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|
MOSFETs 1
- IXFH16N120P
- IXYS
-
1:
Rp420.123
-
157In Stock
|
Mouser Part No
747-IXFH16N120P
|
IXYS
|
MOSFETs 1
|
|
157In Stock
|
|
|
Rp420.123
|
|
|
Rp304.911
|
|
|
Rp295.554
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
16 A
|
950 mOhms
|
30 V
|
3.5 V
|
120 nC
|
- 55 C
|
+ 150 C
|
660 W
|
Enhancement
|
HiPerFET
|
Tube
|
|
|
|
MOSFETs 6 Amps 1200V 2.700 Rds
- IXTT6N120
- IXYS
-
1:
Rp318.120
-
274In Stock
|
Mouser Part No
747-IXTT6N120
|
IXYS
|
MOSFETs 6 Amps 1200V 2.700 Rds
|
|
274In Stock
|
|
|
Rp318.120
|
|
|
Rp181.809
|
|
|
Rp169.517
|
|
|
Rp158.143
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D3PAK-3 (TO-268-3)
|
N-Channel
|
1 Channel
|
1.2 kV
|
6 A
|
2.6 Ohms
|
20 V
|
5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs High Voltage Power MOSFET
- IXTJ4N150
- IXYS
-
1:
Rp293.353
-
248In Stock
|
Mouser Part No
747-IXTJ4N150
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
248In Stock
|
|
|
Rp293.353
|
|
|
Rp166.215
|
|
|
Rp153.373
|
|
|
Rp142.365
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
2.5 A
|
6 Ohms
|
30 V
|
5 V
|
44.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs TO268 1.5KV 12A N-CH HIVOLT
- IXTT12N150HV
- IXYS
-
1:
Rp1.293.943
-
261In Stock
|
Mouser Part No
747-IXTT12N150HV
|
IXYS
|
MOSFETs TO268 1.5KV 12A N-CH HIVOLT
|
|
261In Stock
|
|
|
Rp1.293.943
|
|
|
Rp1.021.138
|
|
|
Rp887.029
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D3PAK-3 (TO-268-3)
|
N-Channel
|
1 Channel
|
1.5 kV
|
12 A
|
2.2 Ohms
|
30 V
|
2.5 V
|
106 nC
|
- 55 C
|
+ 150 C
|
890 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs High Voltage Power MOSFET
- IXTH4N150
- IXYS
-
1:
Rp232.260
-
175In Stock
|
Mouser Part No
747-IXTH4N150
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
175In Stock
|
|
|
Rp232.260
|
|
|
Rp173.003
|
|
|
Rp144.200
|
|
|
Rp128.422
|
|
|
Rp120.166
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
4 A
|
6 Ohms
|
30 V
|
2.5 V
|
44.5 nC
|
- 55 C
|
+ 150 C
|
280 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 3 Amps 1200V 4.500 Rds
- IXTH3N120
- IXYS
-
1:
Rp109.342
-
211In Stock
-
90Expected 15/12/2026
|
Mouser Part No
747-IXTH3N120
|
IXYS
|
MOSFETs 3 Amps 1200V 4.500 Rds
|
|
211In Stock
90Expected 15/12/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
3 A
|
4.5 Ohms
|
20 V
|
4.5 V
|
39 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 0.5 Amps 1000V
- IXTP05N100M
- IXYS
-
1:
Rp110.259
-
300In Stock
|
Mouser Part No
747-IXTP05N100M
|
IXYS
|
MOSFETs 0.5 Amps 1000V
|
|
300In Stock
|
|
|
Rp110.259
|
|
|
Rp57.973
|
|
|
Rp47.700
|
|
|
Rp43.847
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1 kV
|
700 mA
|
15 Ohms
|
30 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 0.75 Amps 1000V 15 Rds
- IXTP05N100
- IXYS
-
1:
Rp85.492
-
549In Stock
|
Mouser Part No
747-IXTP05N100
|
IXYS
|
MOSFETs 0.75 Amps 1000V 15 Rds
|
|
549In Stock
|
|
|
Rp85.492
|
|
|
Rp41.645
|
|
|
Rp38.710
|
|
|
Rp32.656
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1 kV
|
750 mA
|
17 Ohms
|
30 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs High Voltage Power MOSFET
- IXTA05N100HV
- IXYS
-
1:
Rp54.671
-
2.248In Stock
|
Mouser Part No
747-IXTA05N100HV
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
2.248In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1 kV
|
750 mA
|
17 Ohms
|
30 V
|
2.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs TO263 1.5KV 3A N-CH HIVOLT
- IXTA3N150HV
- IXYS
-
1:
Rp260.330
-
223In Stock
-
300Expected 25/01/2027
|
Mouser Part No
747-IXTA3N150HV
|
IXYS
|
MOSFETs TO263 1.5KV 3A N-CH HIVOLT
|
|
223In Stock
300Expected 25/01/2027
|
|
|
Rp260.330
|
|
|
Rp160.344
|
|
|
Rp154.840
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1.5 kV
|
3 A
|
7.3 Ohms
|
30 V
|
2.5 V
|
38.6 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs MOSFET Id3 BVdass1200
- IXTP3N120
- IXYS
-
1:
Rp197.220
-
651In Stock
|
Mouser Part No
747-IXTP3N120
|
IXYS
|
MOSFETs MOSFET Id3 BVdass1200
|
|
651In Stock
|
|
|
Rp197.220
|
|
|
Rp122.001
|
|
|
Rp112.644
|
|
|
Rp102.187
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
3 A
|
4.5 Ohms
|
20 V
|
2.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
200 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 1500V High Voltage Power MOSFET
- IXTT12N150
- IXYS
-
1:
Rp236.847
-
310In Stock
|
Mouser Part No
747-IXTT12N150
|
IXYS
|
MOSFETs 1500V High Voltage Power MOSFET
|
|
310In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D3PAK-3 (TO-268-3)
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
2 Ohms
|
30 V
|
4.5 V
|
106 nC
|
- 55 C
|
+ 150 C
|
890 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs TO263 1.2KV 3A N-CH HIVOLT
- IXTA3N120HV
- IXYS
-
1:
Rp206.026
-
7In Stock
-
350Expected 09/02/2027
|
Mouser Part No
747-IXTA3N120HV
|
IXYS
|
MOSFETs TO263 1.2KV 3A N-CH HIVOLT
|
|
7In Stock
350Expected 09/02/2027
|
|
|
Rp206.026
|
|
|
Rp117.781
|
|
|
Rp108.608
|
|
|
Rp100.169
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1.2 kV
|
3 A
|
4.5 Ohms
|
20 V
|
2.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
200 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs TO263 150V 4A N-CH HIVOLT
- IXTA4N150HV
- IXYS
-
1:
Rp297.389
-
83In Stock
|
Mouser Part No
747-IXTA4N150HV
|
IXYS
|
MOSFETs TO263 150V 4A N-CH HIVOLT
|
|
83In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1.5 kV
|
4 A
|
6 Ohms
|
30 V
|
2.5 V
|
375 nC
|
- 55 C
|
+ 150 C
|
280 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs High Voltage Power MOSFET
- IXTH3N150
- IXYS
-
1:
Rp340.502
-
8In Stock
|
Mouser Part No
747-IXTH3N150
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
8In Stock
|
|
|
Rp340.502
|
|
|
Rp194.835
|
|
|
Rp183.460
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
3 A
|
7.3 Ohms
|
30 V
|
2.5 V
|
38.6 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 6 Amps 1200V 2.700 Rds
- IXTH6N120
- IXYS
-
1:
Rp183.643
-
96In Stock
|
Mouser Part No
747-IXTH6N120
|
IXYS
|
MOSFETs 6 Amps 1200V 2.700 Rds
|
|
96In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
6 A
|
2.4 Ohms
|
20 V
|
2.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 0.1 Amps 1000V 80 Rds
- IXTY01N100
- IXYS
-
1:
Rp78.521
-
300In Stock
|
Mouser Part No
747-IXTY01N100
|
IXYS
|
MOSFETs 0.1 Amps 1000V 80 Rds
|
|
300In Stock
|
|
|
Rp78.521
|
|
|
Rp39.811
|
|
|
Rp35.958
|
|
|
Rp30.454
|
|
|
Rp29.721
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
1 kV
|
100 mA
|
80 Ohms
|
20 V
|
|
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 3 Amps 1200V 4.5 Rds
- IXTA3N120
- IXYS
-
1:
Rp188.230
-
3.012On Order
|
Mouser Part No
747-IXTA3N120
|
IXYS
|
MOSFETs 3 Amps 1200V 4.5 Rds
|
|
3.012On Order
On Order:
1.112 Expected 30/09/2026
1.900 Expected 19/01/2027
Factory Lead Time:
23 Weeks
|
|
|
Rp188.230
|
|
|
Rp114.112
|
|
|
Rp105.123
|
|
|
Rp102.187
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1.2 kV
|
3 A
|
4.5 Ohms
|
20 V
|
2.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 1500 V High Voltage Power MOSFET
- IXTX20N150
- IXYS
-
1:
Rp642.844
-
595On Order
|
Mouser Part No
747-IXTX20N150
|
IXYS
|
MOSFETs 1500 V High Voltage Power MOSFET
|
|
595On Order
On Order:
295 Expected 29/09/2026
300 Expected 23/03/2027
Factory Lead Time:
24 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
20 A
|
1 Ohms
|
30 V
|
4.5 V
|
215 nC
|
- 55 C
|
+ 150 C
|
1.25 kW
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs >1200V High Voltage Power MOSFET
- IXTH12N150
- IXYS
-
1:
Rp398.292
-
285Expected 26/10/2026
|
Mouser Part No
747-IXTH12N150
|
IXYS
|
MOSFETs >1200V High Voltage Power MOSFET
|
|
285Expected 26/10/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
12 A
|
2 Ohms
|
30 V
|
4.5 V
|
106 nC
|
- 55 C
|
+ 150 C
|
890 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 0.75 Amps 1000V 15 Rds
- IXTA05N100
- IXYS
-
300:
Rp57.973
-
Non-Stocked Lead-Time 19 Weeks
|
Mouser Part No
747-IXTA05N100
|
IXYS
|
MOSFETs 0.75 Amps 1000V 15 Rds
|
|
Non-Stocked Lead-Time 19 Weeks
|
|
Min.: 300
Mult.: 50
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1 kV
|
750 mA
|
17 Ohms
|
30 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH VOLT PWR MOSFET 1500V 6A
- IXTH6N150
- IXYS
-
1:
Rp308.580
-
Non-Stocked Lead-Time 32 Weeks
|
Mouser Part No
747-IXTH6N150
|
IXYS
|
MOSFETs HIGH VOLT PWR MOSFET 1500V 6A
|
|
Non-Stocked Lead-Time 32 Weeks
|
|
|
Rp308.580
|
|
|
Rp191.349
|
|
|
Rp163.279
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
500 V
|
6 A
|
3.5 Ohms
|
20 V
|
5 V
|
67 nC
|
- 55 C
|
+ 150 C
|
540 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs High Voltage Power MOSFET
- IXTJ6N150
- IXYS
-
300:
Rp215.749
-
Non-Stocked Lead-Time 24 Weeks
|
Mouser Part No
747-IXTJ6N150
|
IXYS
|
MOSFETs High Voltage Power MOSFET
|
|
Non-Stocked Lead-Time 24 Weeks
|
|
|
Rp215.749
|
|
|
Rp211.713
|
|
Min.: 300
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
3 A
|
3.85 Ohms
|
30 V
|
2.5 V
|
67 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs 1200V High Voltage Power MOSFET
- IXTK20N150
- IXYS
-
1:
Rp1.204.965
-
Non-Stocked Lead-Time 24 Weeks
|
Mouser Part No
747-IXTK20N150
|
IXYS
|
MOSFETs 1200V High Voltage Power MOSFET
|
|
Non-Stocked Lead-Time 24 Weeks
|
|
|
Rp1.204.965
|
|
|
Rp1.046.823
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-264-3
|
N-Channel
|
|
1.5 kV
|
20 A
|
1 Ohms
|
|
|
|
|
|
|
|
|
Tube
|
|
|
|
MOSFETs 2 Amps 800V 6.2 Rds
- IXTP2N80
- IXYS
-
50:
Rp50.452
-
Non-Stocked
|
Mouser Part No
747-IXTP2N80
|
IXYS
|
MOSFETs 2 Amps 800V 6.2 Rds
|
|
Non-Stocked
|
|
|
Rp50.452
|
|
|
Rp37.426
|
|
|
Rp31.372
|
|
|
Rp29.170
|
|
|
Rp27.336
|
|
Min.: 50
Mult.: 50
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
2 A
|
6.2 Ohms
|
20 V
|
|
|
- 55 C
|
+ 150 C
|
54 W
|
Enhancement
|
|
Tube
|
|