TK16x60W Si N-Channel MOSFETs (DTMOSIV)

Toshiba TK16x60W Si N-Channel MOSFETs (DTMOSIV) exhibit the chip design of DTMOSIV generation and come in different variants. The Si N-channel MOSFETs feature low drain-source on-resistance and fast reverse recovery time. These MOSFETs can easily control gate switching. The TK16x60W MOSFETs are available in different dimensions and come in other packages, including DFN8x8, TO-247, TO-3P(N), D2PAK, TO-220, and TO-220SIS. These Toshiba TK16x60W Si N-Channel MOSFETs are used in switching voltage regulators.

Results: 11
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Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=130W F=1MHZ
Datasheet
991In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DTMOS DFN 8?8-OS PD=139W F=1MHZ
Datasheet
2.495In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 245 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 139 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch 15.8A 40W FET 600V 1350pF 43nC
Datasheet
156In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 4.5 V 43 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC
Datasheet
121In Stock
Min.: 1
Mult.: 1

Si N-Channel 1 Channel DTMOSIV Tube
Toshiba MOSFETs TO-3PN PD=130W 1MHz PWR MOSFET TRNS
Datasheet
79In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tray

Toshiba MOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Datasheet
19In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC
Datasheet
89Expected 15/06/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 30 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel
Toshiba MOSFETs TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 4.5 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV
Toshiba MOSFETs N-Ch DTMOSIV 600 V 139W 1350pF 15.8A
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 190 mOhms 139 W DTMOSIV Reel