SiC MOSFETs – Mouser Indonesia

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650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (R_DS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

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Results: 11

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

SCT040H65G3AG
STMicroelectronics
1: Rp207.677
969In Stock

Mfr. Part No.
SCT040H65G3AG

Mouser Part No
511-SCT040H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

Learn More

Datasheet

969In Stock

Cut Tape

Rp207.677

Rp144.016

Rp121.634

Reel

Rp99.252

MouseReel Available

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

N-Channel

1 Channel

650 V

30 A

40 mOhms

- 10 V, + 22 V

4.2 V

39.5 nC

- 55 C

+ 175 C

221 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24

SCTW90N65G2V
STMicroelectronics
1: Rp414.436
47In Stock
600Expected 20/04/2026

Mfr. Part No.
SCTW90N65G2V

Mouser Part No
511-SCTW90N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24

Learn More

Datasheet

47In Stock

600Expected 20/04/2026

Rp414.436

Rp370.956

Rp319.954

Rp319.771

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

650 V

90 A

25 mOhms

- 10 V, + 22 V

1.9 V

157 nC

- 55 C

+ 200 C

390 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

SCT027H65G3AG
STMicroelectronics
1: Rp231.527
1.082In Stock
New Product

Mfr. Part No.
SCT027H65G3AG

Mouser Part No
511-SCT027H65G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Learn More

Datasheet

1.082In Stock

Cut Tape

Rp231.527

Rp162.912

Rp141.631

Reel

Rp119.983

Quote

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

60 A

39.3 mOhms

- 10 V, + 22 V

3 V

48.6 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4
STMicroelectronics
1: Rp198.871
547In Stock
New Product

Mfr. Part No.
SCT040W65G3-4

Mouser Part No
511-SCT040W65G3-4

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

547In Stock

Rp198.871

Rp118.882

Rp113.011

Rp94.115

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4AG
STMicroelectronics
1: Rp229.692
641In Stock
New Product

Mfr. Part No.
SCT040W65G3-4AG

Mouser Part No
511-SCT040W65G3-4AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

641In Stock

Rp229.692

Rp186.946

Rp155.758

Rp138.879

Rp117.781

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

SCT055TO65G3
STMicroelectronics
1: Rp155.941
1.779In Stock
New Product

Mfr. Part No.
SCT055TO65G3

Mouser Part No
511-SCT055TO65G3

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

Learn More

Datasheet

1.779In Stock

Cut Tape

Rp155.941

Rp113.562

Rp94.665

Rp84.208

Rp75.035

Reel

Rp74.852

Min.: 1
Mult.: 1

Reel: 1.800

SMD/SMT

TOLL-8

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

3 V

31 nC

- 55 C

+ 175 C

234 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

SCT040TO65G3
STMicroelectronics
1: Rp176.122
37In Stock
New Product

Mfr. Part No.
SCT040TO65G3

Mouser Part No
511-SCT040TO65G3

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

Learn More

Datasheet

37In Stock

Cut Tape

Rp176.122

Rp123.836

Rp98.335

Reel

Rp80.172

Min.: 1
Mult.: 1

Reel: 1.800

SMD/SMT

TOLL-8

N-Channel

1 Channel

650 V

35 A

63 mOhms

- 10 V, + 22 V

3 V

42.5 nC

- 55 C

+ 175 C

288 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3AG
STMicroelectronics
1: Rp283.996
202In Stock

Mfr. Part No.
SCT018H65G3AG

Mouser Part No
511-SCT018H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

202In Stock

Cut Tape

Rp283.996

Rp200.522

Rp182.726

Reel

Rp149.153

MouseReel Available

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

SCT018W65G3-4AG
STMicroelectronics
1: Rp291.518
532In Stock

Mfr. Part No.
SCT018W65G3-4AG

Mouser Part No
511-SCT018W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

Learn More

Datasheet

532In Stock

Rp291.518

Rp225.656

Rp218.317

Rp212.630

View

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

77 nC

- 55 C

+ 200 C

398 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055W65G3-4AG
STMicroelectronics
1: Rp229.692
57In Stock

Mfr. Part No.
SCT055W65G3-4AG

Mouser Part No
511-SCT055W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

57In Stock

Rp229.692

Rp186.946

Rp155.758

Rp113.378

Quote

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 18 V, + 18 V

4.2 V

32 nC

- 55 C

+ 200 C

210 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3-7
STMicroelectronics
1.000: Rp180.708
Non-Stocked Lead-Time 16 Weeks
New Product

Mfr. Part No.
SCT018H65G3-7

Mouser Part No
511-SCT018H65G3-7

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

Non-Stocked Lead-Time 16 Weeks

Reel

Rp180.708

Min.: 1.000
Mult.: 1.000

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

55 A

27 mOhms

-10 V, 22 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

650V 3rd Gen SiC MOSFETs

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