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NSVMSD1819A-RT1G

Name: onsemi NSVMSD1819A-RT1G
Brand: onsemi
SKU: 863-NSVMSD1819A-RT1G
Price: 4953 IDR
Availability: InStock

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Mouser No:

863-NSVMSD1819A-RT1G

Mfr. No:

NSVMSD1819A-RT1G

Mfr.:

onsemi

Description:

Bipolar Transistors - BJT NPN Bipolar Transistor

Datasheet:

NSVMSD1819A-RT1G Datasheet

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In Stock: 11.376

Stock:: 11.376 Can Dispatch Immediately

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Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp4.953	Rp4.953
	Rp4.311	Rp43.110
	Rp3.247	Rp324.700
	Rp2.000	Rp1.000.000
	Rp1.559	Rp1.559.000
Full Reel (Order in multiples of 3000)
	Rp917	Rp2.751.000
	Rp807	Rp4.842.000
	Rp679	Rp6.111.000
	Rp569	Rp13.656.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-3
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	200 mA
Collector- Emitter Voltage VCEO Max:	60 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	7 V
Collector-Emitter Saturation Voltage:	500 mV
Pd - Power Dissipation:	150 mW
Maximum Operating Temperature:	+ 150 C
Series:	MSD1819A-R
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Continuous Collector Current:	100 mA
DC Current Gain hFE Max:	340
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Datasheet

NSVMSD1819A-RT1G Datasheet

Material Composition Disclosure

USHTS:: 8541210095
TARIC:: 8541210000
ECCN:: EAR99

MSD1819A-R General Purpose & Low VCE Transistor

onsemi MSD1819A-R General Purpose and Low V_CE Transistor is designed for amplifier applications. This NPN transistor features a high current gain (h_FE) from 210 to 460 and a low V_CE <0.5V. The NPN transistor comes in the SC-70/SOT-323 package, designed for low-power surface mount applications. The silicon epitaxial planar transistor is AEC-Q101 qualified and PPAP capable. This low V_CE transistor is Pb and halogen/BFR-free. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.